Efficient generation of nitrogen-vacancy center inside diamond with shortening of laser pulse duration

Kurita, Torataro; Mineyuki, Nobuya; Shimotsuma, Yasuhiko; Fujiwara, Masanori; Mizuochi, Norikazu; Shimizu, Masahiro; Miura, Kiyotaka

doi:10.1063/1.5054730

Cited by 24 publications

(14 citation statements)

References 29 publications

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“…However, as an impurity, the dopant may affect the property of SPE, the effect of Mg cation as an example was tested, the results show the major property of SPE will not be affected by the cation dopant as long as the structure and local electronic configuration of V cation is maintained (see Figures S5 and S7, Supporting Information). For practical application, since the atomic structure of V cation is simple, there are various techniques to achieve it such as electron irradiation, [39] and pulse laser irradiation, [40] the SPE based on V cation is thus achievable in experimental conditions. For the SPE in bulk material, refraction is an issue that strongly influences the signal extracting.…”

Section: Methodsmentioning

confidence: 99%

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

et al. 2021

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Single-photon sources based on solid-state material are desirable in quantum technologies. However, suitable platforms for single-photon emission are currently limited. Herein, a theoretical approach to design a single-photon emitter based on defects in solid-state material is proposed. Through group theory analysis and hybrid density functional theory calculation, the charge-neutral cation vacancy in III-V compounds is found to satisfy a unique 5-electron-8-orbital electronic configuration with T d symmetry, which is possible for single-photon emission. Furthermore, it is confirmed that this type of single-photon emitter only exists in wide bandgap III-nitrides among all the III-V compounds. The corresponding photon energy in GaN, AlN, and AlGaN lies within the optimal range for transfer in optical fiber, thereby render the charge-neutral cation vacancy in wide-bandgap III-nitrides as a promising single-photon emitter for quantum information applications.

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Section: Methodsmentioning

confidence: 99%

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

et al. 2021

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“…Thus the absorption is decoupled from the lattice heating, which may promote fabrication precision. [93,94] This is extremely important for applications of color centers since its spin and optical coherence are sensitive to the lattice environment.…”

Section: Nonlinear Absorption Process and Deterministic Breakdownmentioning

confidence: 99%

Laser Writing of Color Centers

Wang

Fang

Sun

et al. 2021

Laser & Photonics Reviews

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Color centers, optically active defects within solids, are vital for leading quantum information technologies such as quantum computing and quantum sensing. An essential prerequisite for realizing scalable quantum architectures is the ability to create quantum emitters deterministically. In the last decades, significant efforts have been devoted to selectively generating color centers. One of the most used methods is high-energy ion implantation. However, this method usually causes extended lattice damage along the entire trajectory because of ions bombardment. Moreover, the position depth of color centers is also limited by the ions penetrate length in crystals. The direct laser-writing (DLW) technique has recently emerged as a powerful tool to create color centers in solid-state materials. It can define color centers at arbitrary depths inside the substrate and operate at the ambient environment, therefore, providing a feasible 3D fabrication method for integrated quantum photonics. Here, recent advancements of laser writing of color centers in solid-state materials are reviewed, from bulk crystals, such as diamond and silicon carbide, to nanostructures, involving single-walled carbon nanotubes, 2D layered materials, and quantum dots.

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“…However, SiV centers exhibited fairly high energetic stability once formed, as indicated by the binding energies in Table 2. Therefore, to help increase the quantity of SiV centers, it is important to motivate these vacancies to diffuse towards Si; for this purpose, laser ablation is useful and has also previously been successfully used in the generation of NV centers [50][51][52].…”

Section: H-terminatedmentioning

confidence: 99%

A Theoretical Study of the Energetic Stability and Geometry of Silicon-Vacancy Color Centers in Diamond (001) Surfaces

Pan

Shen

et al. 2019

Applied Sciences

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Single neutral silicon-vacancy (SiV 0 ) color centers under H-, O-, or N-terminated diamond (001) surfaces were investigated using density functional theory. The formation energy calculation indicated that it is generally easier for SiV 0 to be embedded in an O-terminated diamond (001) surface as compared with H-and N-terminated surfaces, which were effected above the fifth C layer. The effects of the surface termination species on inner diamond atoms decay to be negligible below the fifth C layer. The binding energy results indicated that SiV centers exhibited rather high energetic stability once formed. Additionally, it was revealed that these three surface-terminating species had contracting or expanding effects on inner surface atoms. The calculation for density of states showed that the N-terminated diamond (001) surface served as a suitable medium for single SiV 0 to function as a single-photon source.Appl. Sci. 2019, 9, 5471 2 of 15 nanodiamonds (NDs), which fail to meet the key requirements [10] for ideal single-photon sources. In contrast, negatively charged silicon-vacancy (SiV − ) centers exhibit a sharp ZPL at 738 nm (1.681 eV) at room temperature, with a large DW factor of 0.7 [23] and a short luminescence lifetime of 1 to 4 ns [24]. Similar to SiV − , the SiV center in a neutral charge state (SiV 0 ) also possesses a high DW factor (~0.9), with most of its emitted light concentrated into the ZPL at 946 nm (1.31 eV) [25], rendering SiV 0 a promising candidate for serving as single-photon emitters.The SiV 0 has a ground state electron spin of S = 1. Single SiV defects in diamond are composed of a silicon substituting a C atom (Si) and a vacancy (V) in the nearest neighboring C site. Unlike the NV center, where the nitrogen atom is covalently bonded to its three nearest C atoms, and thus exhibiting C 3V structural symmetry, the SiV center theoretically forms a split-vacancy structure (i.e., a silicon atom located at a bond-center site) in bulk diamond (Figure 1), thus, exhibiting D 3d symmetry.Appl. Sci. 2020, 10, x FOR PEER REVIEW 2 of 15 fluorescence lifetime of up to ~24 ns [20][21][22] in nanodiamonds (NDs), which fail to meet the key requirements [10] for ideal single-photon sources. In contrast, negatively charged silicon-vacancy (SiV − ) centers exhibit a sharp ZPL at 738 nm (1.681 eV) at room temperature, with a large DW factor of 0.7 [23] and a short luminescence lifetime of 1 to 4 ns [24]. Similar to SiV − , the SiV center in a neutral charge state (SiV 0 ) also possesses a high DW factor (~0.9), with most of its emitted light concentrated into the ZPL at 946 nm (1.31 eV) [25], rendering SiV 0 a promising candidate for serving as single-photon emitters.The SiV 0 has a ground state electron spin of S = 1. Single SiV defects in diamond are composed of a silicon substituting a C atom (Si) and a vacancy (V) in the nearest neighboring C site. Unlike the NV center, where the nitrogen atom is covalently bonded to its three nearest C atoms, and thus exhibiting 3 structural symmetry, the SiV center th...

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Efficient generation of nitrogen-vacancy center inside diamond with shortening of laser pulse duration

Cited by 24 publications

References 29 publications

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation

Laser Writing of Color Centers

A Theoretical Study of the Energetic Stability and Geometry of Silicon-Vacancy Color Centers in Diamond (001) Surfaces

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