Efficient “green” quantum dot-sensitized solar cells based on Cu2S–CuInS2–ZnSe architecture

Abstract

A Cu(2)S-CuInS(2)-ZnSe quantum dot (QD)-sensitized solar cell with cascaded energy gap structures has been fabricated. Under simulated illumination (AM 1.5, 100 mW cm(-2)), the best device is obtained with a Cu(2)S-CuInS(2)-ZnSe QD-sensitized solar cell, yielding a power conversion efficiency of 2.52%.

Cu2S nanoparticles modified 3D flowerlike Bi2WO6: Enhanced photoelectric performance and photocatalytic degradation

“…The fundamental absorbance edge of Bi 2 WO 6 is about 450 nm. Compared with pure Bi 2 WO 6 , the visible light absorption of NPs Cu 2 S/Bi 2 WO 6 enhanced and a red shift appeared with the increasing content of Cu 2 S. The red shift was attributed to the photosensitizing effect of the incorporated Cu 2 S NPs [6] , thus resulting in absorbing more photons and a favorable photocatalytic reaction.…”

Efficiency enhancement of CuInS2 quantum dot sensitized TiO2 photo-anodes for solar cell applications

“…And TiO 2 nanoparticle films were then immersed into the 3.5 nm MPA-capped CuInS 2 QDs methanol solution for desired times. The obtained photo-anode was signed as L. Additionally, the TiO 2 photo-anodes were processed by the SILAR technique to fabricate the CuInS 2 QDSSCs [18,19]. In this SILAR method, the TiO 2 nanoparticle films were firstly immersed into a 0.1 M In(NO) 3 solution for 1 min, and then immersed into a 1.25 Â 10 À3 mM Cu(NO) 2 solution for 30 s, finally immersed into a 0.135 M Na 2 S solution for 4 min.…”

“…However, it is very difficult to obtain the QDs full-covered TiO 2 films by this technique which obviously limits the enhancement of photovoltaic performance [18]. With a novel SILAR technique, more content of QDs can be deposited on the surface of TiO 2 films to enhance the photovoltaic performance [19]. However, the difficulty for size controlling of QDs and weak interaction between the QDs and TiO 2 will limit the optical absorption and fill factor of the solar cells.…”

ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

“…Chang et al reported that CuInS2 QD-sensitized TiO2 nanoparticle film with a buffer layer (Cu2S) and a passivation layer (ZnSe), fabricated by using the successive ionic-layer adsorption and reaction (SILAR) process and achieved a PCE of 2.52% [15]. Zhou et al reported QDSSCs based on CuInS2 and introduction of In2S3 buffer layer suing SILAR process, which presented as high as ~1.06% PCEs [16].…”