Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

Mohanbabu, A.; Mohankumar, N.; Raj, D. Godwin; Sarkar, Partha; Saha, Samar K.

doi:10.1016/j.spmi.2017.01.043

Cited by 51 publications

(19 citation statements)

References 17 publications

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“…2 shows the fitting result of thecharacteristic of GaN-FETSiO2, in which the calculated currents fit well with the measured ones. These results confirm that the current is determined by 0 , , and , as modeled in (6) and also reveal that the currents are not influenced by electron mobility.…”

Section: Resultssupporting

confidence: 82%

Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula

et al. 2021

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Section: Resultssupporting

confidence: 82%

Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula

et al. 2021

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“…FETs, various dielectrics have been used for the fabrication of H-diamond metal-oxide-semiconductor FETs (MOSFETs) [11]- [13]. Proper dielectrics are useful to improve the device performance [28], [29]. Among them, the Al 2 O 3 dielectric grown at high temperature using atomic layer deposition (ALD) has shown the highest potential for use in H-diamond FETs due to the high breakdown voltage and high stability [14]- [16].…”

Section: Introductionmentioning

confidence: 99%

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric

Ren

et al. 2020

IEEE Access

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C-H diamond metal-oxide-semiconductor field effect transistors with different structures were fabricated on the same polycrystalline diamond plate. Devices A and B with 25-nm-thick high temperature (300 • C) atomic layer deposition grown Al 2 O 3 dielectric have the same source-to-drain distance of 6 µm and different gate length of 2 µm and 6 µm, respectively. Both devices show ultra-high on/off ratio of over 10 10 and ultra-low gate leakage of below 10 −10 A and continuous measurement stability. Device B with the source/drain-channel interspaces eliminated has achieved an on resistance of 46.20 •mm, which is record low in the reported 6-µm H-diamond MOSFETs with the gate dielectric prepared at high temperature (≥ 300 • C). Meanwhile, device B shows larger drain current in a large portion of the linear region at V GS = −6 V, and a just slightly smaller I Dmax compared with device A though its L G is three times of that of device A. A simple model of I D was used to explain the physics behind this phenomenon. In addition, the breakdown voltage is 145 V for device A and 27 V for device B, corresponding to the average breakdown field of about 0.72 MV/cm and 10.8 MV/cm, respectively.

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“…This leads to I ON /I OFF current ratios in the range of 4.240 × 10 7 , 1.465 × 10 6 , 2.99 × 10 4 , 1.931 × 10 2 , and 9.52 × 10 1 for Al 0.07 Ga 0.93 N, Al 0.05 Ga 0.95 N, Al 0.03 Ga 0.97 N, Al 0.01 Ga 0.99 N, and GaN buffers, respectively. A higher value of ON/OFF current ratio results in a steeper subthreshold slope ( SS ). SS is the parameter by which leakage in a device at OFF‐condition is determined The simulation data show that the values of SS extracted at V ds = 0.1 V, are 262, 183, 100, 84, and 72 mV/decade for GaN, Al 0.01 Ga 0.99 N, Al 0.03 Ga 0.97 N buffer, Al 0.05 Ga 0.95 N, and Al 0.07 Ga 0.93 N buffers, respectively.…”

Section: Resultsmentioning

confidence: 99%

Device characteristics of enhancement mode double heterostructure DH‐HEMT with boron‐doped GaN gate cap layer for full‐bridge inverter circuit

Mohanbabu¹,

Mohankumar²,

Raj

et al. 2017

Int J Numerical Modelling

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This paper reports a systematic theoretical study of Al0.23Ga0.77N/GaN/AlxGa1‐xN double‐heterojunction high electron mobility transistors (DH‐HEMTs) with a boron‐doped GaN cap layer under the gate. Boron containing GaN is a desired replacement for Schottky gate in DH‐HEMT to improve the resistivity and surface qualities of GaN cap with good structural properties, and the influence of polarization field in the GaN cap layer can be used to lift up the conduction band for normally OFF operation of the device. This study shows that the B‐doped GaN cap layer offers excellent device characteristics such as high threshold voltage VT of 1.92 V, steep subthreshold slope of ~ 72 mV/dec, high ON/OFF drain current ratio of ~ 107, extremely low subthreshold drain current Ids,LL ~ 10−9 A/mm, and low gate leakage current, Igs,LL less than 10−15 A/mm. For an Al0.07Ga0.93N back‐barrier/buffer, a high OFF‐state breakdown voltage (VBR,OFF) of 865 V is achieved at Ids = 1 mA/mm and Vgs = 0 V with substrate grounded and gate‐to‐drain distance and gate field plate length of 10 and 5 μm, respectively. The simulated high VT and VBR,OFF values are achieved due to the presence of increased back‐barrier height of the AlxGa1‐xN buffer and high Schottky barrier between the Boron‐doped GaN cap and gate metal. Finally, a DC to AC full‐bridge inverter circuit is designed to evaluate the benefit of B‐doped DH‐HEMTs based switching devices for an ultra‐low‐loss inverter circuit.

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Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

Cited by 51 publications

References 17 publications

Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula

Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric

Device characteristics of enhancement mode double heterostructure DH‐HEMT with boron‐doped GaN gate cap layer for full‐bridge inverter circuit

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Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

Cited by 51 publications

References 17 publications

Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula

Investigation of Electrical Behaviors Observed in Vertical GaN Nanowire Transistors Using Extended Landauer-Büttiker Formula

Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3Gate Dielectric

Device characteristics of enhancement mode double heterostructure DH‐HEMT with boron‐doped GaN gate cap layer for full‐bridge inverter circuit

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Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃Gate Dielectric