Efficient internal electrostatic transduction of the 41<sup>st</sup>radial mode of a ring resonator

Ziaei-Moayyed, Maryam; Quévy, E.; Hsieh, J.C.; Howe, Roger T.

doi:10.1109/memsys.2010.5442307

Cited by 4 publications

(13 citation statements)

References 7 publications

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“…Silicon on the other hand is the material of choice for the majority of microelectronics applications and the concept of system-on-chip is primarily targeted towards using silicon as the common substrate. For this reason, the past decade has seen increasing effort to realize integrated microelectromechanical systems (MEMS) silicon resonators to replace quartz in timing applications [3] [8]. MEMS resonators are most commonly actuated using capacitive or piezoelectric transduction mechanism.…”

Section: Introductionmentioning

confidence: 99%

Temperature compensated silicon resonators for space applications

Rais‐Zadeh

Thakar

et al. 2013

SPIE Proceedings

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This paper presents piezoelectric transduction and frequency trimming of silicon-based resonators with a center frequency in the low megahertz regime. The temperature coefficient of frequency (TCF) of the resonators is reduced using both passive and active compensation schemes. Specifically, a novel technique utilizing oxide-refilled trenches is implemented to achieve efficient temperature compensation while maintaining compatibility with wet release processes. Using this method, we demonstrate high-Q resonators having a first-order TCF as low as 3 ppm/°C and a turnover temperature of around 90 °C, ideally suited for use in ovenized platforms. Using active tuning, the temperature sensitivity of the resonator is further compensated around the turnover temperature, demonstrating frequency instability of less than 400 ppb. Such devices are ideally suited as timing units in space applications where size, power consumption, and temperature stability are of critical importance.

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Section: Introductionmentioning

confidence: 99%

Temperature compensated silicon resonators for space applications

Rais‐Zadeh

Thakar

et al. 2013

SPIE Proceedings

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“…Electrostatically transduced micromechanical resonators have been demonstrated with frequencies higher than 1GHz and high quality factors, making them attractive for wireless communication systems [1][2][3][4]. As the communication industry moves towards multi-band, lower power, smaller, and lighter systems, there is a growing demand for small, CMOS-compatible, high-Q micromechanical resonators.…”

Section: Introductionmentioning

confidence: 99%

“…Scaling electrostatic resonators to higher frequencies and smaller dimensions results in increased motional resistance, motivating smaller gap sizes, which increase the fabrication difficulty. Replacing the air gap in a resonator with a dielectric-filled gap can enhance the transduction by efficient coupling to higher order modes, extending the resonant frequencies beyond 5GHz and yielding high f x Q products [2][3][4]. Dielectrically transduced resonators demonstrated in [2][3][4] have coupled to higher order modes through single dielectric drive and sense electrodes.…”

Section: Introductionmentioning

confidence: 99%

“…Replacing the air gap in a resonator with a dielectric-filled gap can enhance the transduction by efficient coupling to higher order modes, extending the resonant frequencies beyond 5GHz and yielding high f x Q products [2][3][4]. Dielectrically transduced resonators demonstrated in [2][3][4] have coupled to higher order modes through single dielectric drive and sense electrodes. The ultimate benefit of internal electrostatic transduction can be demonstrated by coupling to higher-order modes through densely spaced internal transducers excited in parallel [4], to achieve lower motional resistance and selective coupling.…”

Section: Introductionmentioning

confidence: 99%

“…Dielectrically transduced resonators demonstrated in [2][3][4] have coupled to higher order modes through single dielectric drive and sense electrodes. The ultimate benefit of internal electrostatic transduction can be demonstrated by coupling to higher-order modes through densely spaced internal transducers excited in parallel [4], to achieve lower motional resistance and selective coupling. This paper describes the design, fabrication process, and characterization of a polysilicon notched ring resonator fabricated using a double nanogap process [6].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Higher-order dielectrically transduced bulk-mode ring resonator with low motional resistance

Ziaei-Moayyed

Howe

2010

2010 IEEE International Frequency Control Symposium

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This paper reports internal dielectric transduction of the 41 st radial bulk-mode of a ring resonator at 2.79GHz with a quality factor exceeding 11,500 in air. The transducer electrodes are integrated within the vibrating structure in a dense serpentine pattern, with the dielectric-filled gaps strategically placed on the nodal lines to excite the 41 st order bulk radial mode. The serpentine dielectric transduction results in a low motional resistance of less than 500Ω, which can be detected by direct two-port transmission measurements. The "notched" ring design allows for anchoring this resonator at the center nodal line of the ring, resulting in higher Q and lower motional resistance. This resonator is fabricated by a double nanogap process, where 30nm silicon nitride sidewall layers are formed using a combination of optically defined trenches and deposition of a high-κ dielectric followed by a doped polysilicon layer.

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Differential internal dielectric transduction of a Lamé-mode resonator

Ziaei-Moayyed

Elata

Quévy

et al. 2010

J. Micromech. Microeng.

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This paper reports the parallel internal electrostatic transduction of a laterally driven Lamé-mode polysilicon resonator. The transducer is fabricated using a manufacturable double nanogap process, where the 50 nm silicon nitride dielectric layers are formed on sidewalls of an optically defined trench by a conformal deposition, which is followed by refilling the trench with a doped polysilicon electrode layer. The transduction electrodes are placed and oriented to maximize electromechanical transduction efficiency for the fundamental Lamé mode. A 128.15 MHz Lamé-mode resonator is driven and sensed differentially, resulting in a motional resistance of 30 k and the quality factor of Q > 12 000 in air.

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Efficient internal electrostatic transduction of the 41^stradial mode of a ring resonator

Cited by 4 publications

References 7 publications

Temperature compensated silicon resonators for space applications

Temperature compensated silicon resonators for space applications

Higher-order dielectrically transduced bulk-mode ring resonator with low motional resistance

Differential internal dielectric transduction of a Lamé-mode resonator

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Efficient internal electrostatic transduction of the 41stradial mode of a ring resonator

Cited by 4 publications

References 7 publications

Temperature compensated silicon resonators for space applications

Temperature compensated silicon resonators for space applications

Higher-order dielectrically transduced bulk-mode ring resonator with low motional resistance

Differential internal dielectric transduction of a Lamé-mode resonator

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Efficient internal electrostatic transduction of the 41^stradial mode of a ring resonator