Efficient intraband hot carrier relaxation in Sn and Pb perovskite semiconductors mediated by strong electron-phonon coupling

Femtosecond Transient Absorption Spectra and Dynamics of Carrier Relaxation of Tin Perovskites in the Absence and Presence of Additives

“…An enhanced understanding of the defect-induced charge recombination dynamics of Sn perovskites under various growth conditions is hence crucial for improving the performance of Sn-based PSC devices. Time-resolved spectral techniques in the terahertz region, fluorescence decay, ,,,,− and transient absorption spectra (TAS) , were employed to probe the dynamics of carrier recombination and mechanisms of carrier cooling in Sn perovskites, but a detailed assessment of the influence of additives on the type of defects and their role in recombination rates has not yet been reported. To enhance the performance of a FASnI 3 device, we showed , that co-additive EDAI 2 and additive SnF 2 are required to control the film morphology, to passivate the surface defect states, and to relax the crystal strain.…”