We have fabricated periodic multilayers that comprise either Si/Tb or SiC/Tb bilayers, designed to operate as narrowband reflective coatings near 60 nm wavelength in the extreme ultraviolet (EUV). We find peak reflectance values in excess of 20% near normal incidence. The spectral bandpass of the best Si/Tb multilayer was measured to be 6.5 nm full width at half-maximum (FWHM), while SiC/Tb multilayers have a more broad response, of order 9.4 nm FWHM. Transmission electron microscopy analysis of Si/Tb multilayers reveals polycrystalline Tb layers, amorphous Si layers, and relatively large asymmetric amorphous interlayers. Thermal annealing experiments indicate excellent stability to 100 0 C (1 h) for Si/Tb. Narrowband reflective multilayer coatings operating near normal incidence in the extreme ultraviolet (EUV) band have by now found wide application in a number of disciplines, including solar physics, photolithography, short-wavelength lasers, plasma diagnostics, etc. While peak reflectance values as high as 70% have been obtained at the short-wavelength end of the EUV near 13 nm, at longer wavelengths the performance of even the best coatings is considerably lower. The limit on multilayer performance at long wavelengths is primarily due to absorption in the constituent materials; an ideal EUV multilayer would comprise materials with low absorption so that the incident radiation can penetrate deeply into the multilayer stack, thereby allowing for the coherent addition of reflections from a large number of layer interfaces. But with high-absorption materials only a few interfaces can contribute to the reflection process, thereby limiting the ultimate performance. Our principal motivation for the development of long-wavelength EUV multilayers is directed at the production of narrowband imaging telescopes for solar physics. A number of important coronal emission lines in the 60-65 nm band, including 0 V near 63.0 nm and Mg X near 61.0 nm, could be observed if efficient narrowband multilayer coatings were available. Multilayer imagers that could be tuned to these wavelengths would nicely complement currently available multilayers that operate at shorter wavelengths, and that have been used in satellite instruments such as SoHO/EIT, 1 TRACE, 2 and the SDO/AIA 3 instrument currently under development, all of which have been limited to wavelengths shorter than 34 nm. In recent years narrowband multilayer performance has been extended to longer EUV wavelengths with materials such as Mg and Sc: SiC/Mg multilayers 4 show high reflectance in the range 25-40 nm, i.e., below the Mg K edge near 25 nm (and will be used in the SDO/AIA instrument), while Si/Sc multilayers 5 operate with relatively high efficiency in the 35-50 nm range, i.e., below the 3p-3d absorption "window" for this material. However, at wavelengths longer than -50 nm the development of efficient multilayers has been limited thus far by a dearth of suitable multilayer materials having sufficiently low absorption.We have identified the rare-earth elements, w...