Efficient modeling of microscopic and macroscopic noise behavior of submicron-highly-doped semiconductor devices at millimeter-wave frequencies

<title>Impact of alloy composition on the noise behavior of heterostructure devices at millimeter wave frequencies</title>

“…However, the complicated dependence ofthe characteristics ofsophisticated multilayer and multi-channel Hetero-FETs on the device geometry and on the bias conditions makes the accuracy ofthe results and interpretations which are obtained by these analytical models questionable. On the other hand and although several experimental and theoretical studies have been carried through to characterize the operation and to optimize the structure of the non-stationary transport properties inside submicrometer devices [5][6][7], few models can accurately interpret the noise behavior ofHetero-FETs at microwave and millimeter-wave frequencies [8]. For example, it has been stated that optimized MESFET structures are able to produce noise figures which are comparable to or even better than the recorded noise performance of Hetero-FETs with the same gate-lengths [6].…”