Efficient modulation of thermal transport in two-dimensional materials for thermal management in device applications

Abstract

The thermal management applications based on 2D materials are summarized from both theoretical and experimental perspectives.

Dual‐Crossbar Configurated Bi2O2Se Device for Multiple Optoelectronic Applications

“…It is worth noting that all these three devices were constructed based on the same Bi 2 O 2 Se flake, thus the difference could be attributed to the dual-crossbar architecture. The bottom electrodes mainly collect the current from the bottom surface of the ≈62 nm thick Bi 2 O 2 Se, which indeed can be significantly influenced by the underlying SiO 2 substrate, such as encapsulation , [37] dielectric screening, [38][39][40] thermal dispersion [41][42][43] and chemical contamination (during the transfer process) , [44] the reduced charge transport and current collection efficiency could result in lower dark current and thus hindering the photoresponse performance. This drawback can be partly optimized by shortening the channel length from micrometer scale (≈16.7 μm for the BSH device) to nanometer scale (≈62 nm for the MSV device), like the scaling down strategy has been widely used in the integrated circuit industry.…”

Innovative Approaches to Thermal Management in Next-Generation Electronics

“…During their phase transitions, PCMs display the intriguing property of absorbing or releasing a large quantity of heat. These materials undergo latent heat absorption or release as they switch between the solid and liquid states (and vice versa), resulting in a significant energy exchange [22]. PCMs are very good at absorbing extra heat produced by electrical components and then releasing it during future cooling stages because to the latent heat effect.…”

Current-Limited Conductive Atomic Force Microscopy

“…With continuously shrinking electronic device dimensions, − precise knowledge about the electrical behavior of different materials at the nanoscale is indispensable. Conductive atomic force microscopy (CAFM) was originally invented in 1993 and nowadays has become the standard technique used by the semiconductors industry to evaluate the electronic properties of materials and devices at the nanoscale. − In brief, CAFM is a modification of standard AFM that relies on three components: a conductive and sharp nanoprobe (often referred to as tip), a voltage source to apply a potential difference between the nanoprobe and the sample, and a current preamplifier that converts analog currents (picoamperes) into digital signals readable by standard integrated circuits (volts) .…”