Efficient Monte Carlo device modeling

Bufler, F. M.; Schenk, Andreas; Fichtner, W.

doi:10.1109/16.870568

Cited by 44 publications

(19 citation statements)

References 42 publications

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“…The silicon anisotropic full-band structure is computed with the Empirical Pseudopotential Method [30]. Scattering mechanisms are assumed to be isotropic and include: elastic acoustic phonon scattering, inelastic optical phonon scattering, II scattering (according to the isotropic model of [28]), impact ionization. SR scattering is treated as in [31] i.e.…”

Section: Numonyx-mcmentioning

confidence: 99%

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

Palestri

Alexander

Asenov

et al. 2009

Solid-State Electronics

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Section: Numonyx-mcmentioning

confidence: 99%

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

Palestri

Alexander

Asenov

et al. 2009

Solid-State Electronics

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“…Scattering mechanisms include: elastic acoustic phonon scattering, inelastic optical phonon scattering, ionized impurity scattering (isotropic model of [35]), impact ionization. In this work we purposely neglected surface scattering because of the absence of a physically sound model for NW-MOS where carrier confinement take place in two dimensions.…”

Section: B Strain Dependent Band Structure and Scatteringmentioning

confidence: 99%

Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs

Ghetti

Carnevale

Rideau

2007

IEEE Trans. Nanotechnology

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In this paper we report on a general methodology to investigate nanowire MOSFETs based on the coupling of mechanical simulation with 3-D real-space Monte Carlo simulation. The Monte Carlo transport model accounts for both strain silicon and quantum mechanical effects. Mechanical strain effects are accounted for through an appropriate change of the anisotropic band structure computed with the empirical pseudopotential method. Quantum effects are instead included by means of a quantum mechanical correction of the potential coming from the self-consistent solution of the Schrödinger equation. This methodology has been then applied to the simulation of a test case silicon nanowire n-MOSFET. Impact of mechanical strain and quantum effects on the drive current is investigated. It is shown that only the inclusion of strain and quantum mechanical effects allows a good agreement with experimental data, demonstrating the validity of the proposed methodology for ultimate devices.Index Terms-Monte Carlo simulation, nanowire MOSFET, quantum effects, strained silicon.

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“…Sentaurus offers two main roads for device simulation: Monte Carlo simulation of the full Boltzmann transport equation (BTE) [12] (Sentaurus MOCA [13,14] or Sentaurus SPARTA [15,16]) or electronic transport models based on the moments of the BTE [17] (Sentaurus Device [11]). In any case, the Device TCAD tool only considers the solution of the Poisson equation to determine the instantaneous electric field inside the device.…”

Section: Sentaurus Tcad Descriptionmentioning

confidence: 99%

Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

Palomo

Fernández-Martínez

Mogollon

et al. 2010

Int J Numerical Modelling

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SUMMARYPulsed laser illumination constitutes an excellent tool to emulate the effects produced by the impact of highly energetic particles on electronic circuits. Numerical simulation techniques could be used to study these effects and to establish accurate relationships between the laser parameters and the particle characteristics. Unfortunately, although particle incidence can be accurately simulated, up to now, there not exist a simulation technique able to reproduce completely the effects in electronics produced by a femtosecond pulsed laser. In this paper, we explore the Synopsys Sentaurus TCAD ability to simulate the effects of pulsed laser illumination. Theoretical study of the physics of the laser-semiconductor interactions leads us to design a new simulation tool. Modifying the heavy ion generation rate included in Sentaurus TCAD, we can take into account all the theoretical predicted characteristics of femtosecond laser illumination, and reproduce the single event effects (SEE) found in experimental tests.

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Efficient Monte Carlo device modeling

Cited by 44 publications

References 42 publications

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs

Simulation of femtosecond pulsed laser effects on MOS electronics using TCAD Sentaurus customized models

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