Efficient n‐Doping of Polymeric Semiconductors through Controlling the Dynamics of Solution‐State Polymer Aggregates

Abstract

Doping of polymeric semiconductors limits the miscibility between polymers and dopants.A lthough significant efforts have been devoted to enhancing miscibility through chemical modification, the electrical conductivities of n-doped polymeric semiconductors are usually below1 0Scm À1 .W e report adifferent approach to overcome the miscibility issue by modulating the solution-state aggregates of conjugated polymers.Wefound that the solution-state aggregates of conjugated polymers not only changed with solvent and temperature but also changed with solution aging time.M odulating the solution-state polymer aggregates can directly influence their solid-state microstructures and miscibility with dopants.A s ar esult, both high doping efficiency and high charge-carrier mobility were simultaneously obtained. The n-doped electrical conductivity of P(PzDPP-CT2) can be tuned up to 32.1 Scm À1 .T his method can also be used to improve the doping efficiency of other polymer systems (e.g. N2200) with different aggregation tendencies and behaviors.

Unraveling the Molar Mass Dependence of Shearing‐Induced Aggregation Structure of a High‐Mobility Polymer Semiconductor

“…We can see from above that TDPP-Se polymers with different M n showed distinct differences in microstructure and thus device performance of bar-and spin-coated films. Therefore, considering that the solution-state structure plays an important role in determining the solid-state microstructure, [37,38,42,49] we surmise that the polymers with various molecular weights may have different impacts on the polymer aggregation structures in solution and thus differing device performance. Accordingly, SANS measurements on o-DCB-d 4 solution and TEM measurements on freeze-dried samples were performed to explore the effect of M n on solution-state aggregation and thus provide some useful insights in precisely controlling the aligned structure for realizing high-performance OTFTs.…”

Backbone-driven host–dopant miscibility modulates molecular doping in NDI conjugated polymers

“…[4][5][6][7][8][9][10][11] While p-type doped OSCs have achieved s in a range of 10 3 to 10 4 S cm À1 , n-type doped OSCs possess s in the order of 10 0 to 10 1 S cm À1 . [12][13][14][15][16] Functional organic thermoelectric devices require both n-type and p-type materials. Hence, the design of new n-type conjugated polymers (CPs) and, the understanding of the rules to design them, is of uttermost importance to overcome these challenges.…”

Single‐Solution Doping Enabling Dominant Integer Charge Transfer for Synergistically Improved Carrier Concentration and Mobility in Donor–Acceptor Polymers

“…That means the polymer backbone orientation relative to the substrate could be controlled by solution doping process which has probably endowed the predetermined packing property before film formation as discussed in n-doping or OFET devices. [51,52] Therefore, the pristine orientation could not be the key factor to screen highly conductive polymers. The evolution of crystallinity confirms that the lower mobility of doped Pg 3 2T-OTz at low MR is attributed to the existence of bimodal orientations.…”