Efficient passivation and size control of Si nanograins with stable photoluminescence

Abstract

The Si-rich a-SiN x films are synthesized by pulsed laser ablation of silicon target under NH 3 atmosphere. By using laser-induced crystallization technique, the fabrication of nc-Si embedded in the SiN x is also realized. The crystallinity and microstructure of the films after laser annealing are characterized by scanning electron microscopy and microRaman spectroscopy. Additionally, in order to investigate the role of the SiN x on protecting the nc-Si from the oxidation in the air, the energy diffraction X-ray spectrum is also carried out. By photoluminescence (PL) spectrum measurement, the PL peak blue shifting is observed at room temperature. The results suggest that nc-Si embedded in the silicon nitride could be effectively passivated and stable PL of nasnosilicon grains could be obt ained.