Efficient photoemission from GaAs epitaxial layers

Garbe, S.; Frank, Gerhard

doi:10.1016/0038-1098(69)90629-2

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1970

2018

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Cited by 9 publications

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“…Following the work of Turnbull and Evans (1968), a surface covering of alternate layers of caesium and oxygen has been employed to provide greater stability and increased yield of photoemission due to the lower work function of these layers compared with caesium alone. Independent reports by James et al (1968) and Garbe and Frank (1969) show that luminous sensitivities in excess of 1000 PA lm-1 can be achieved when the doping level and surface coverage with caesium and oxygen have both been optimized. The wavelength response of this system extends to 0.9 pm corresponding to the band gap of GaAs.…”

Section: Introductionmentioning

confidence: 99%

A GaAs-Cs-O transmission photocathode

Andrew¹,

Gowers²,

Henderson³

et al. 1970

J. Phys. D: Appl. Phys.

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Polycrystalline GaAs layers have been deposited on sapphire substrates by the AsCl3-Ga-H2 vapour transport method, and treated with caesium and oxygen. A layer 0·6 μm thick when operated as a photocathode has shown a luminous sensitivity of 70 μA lm−1, in transmission. Thicker layers have shown lower sensitivities. Spectral response curves are given for layers 0·6 and 0·8 μm thick and show yields out to 1·4 ev.An attempt has been made to relate the results to an elementary theory for transmission photocathodes.

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Section: Introductionmentioning

confidence: 99%