2018
DOI: 10.1002/advs.201800130
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Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer

Abstract: Planar perovskite solar cells using low‐temperature atomic layer deposition (ALD) of the SnO2 electron transporting layer (ETL), with excellent electron extraction and hole‐blocking ability, offer significant advantages compared with high‐temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO2 is essential to reduce charge recombination at the perovskite and … Show more

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Cited by 136 publications
(102 citation statements)
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“…Higher CB position of amorphous SnO 2 can lead to an improvement of V OC in PSCs. Recently, Lee et al further improved the planar PSCs up to 20.03% using the low‐temperature ALD process . They found that SnO 2 ETL prepared by low‐temperature processed ALD should be passivated because of its metal‐like nature.…”
Section: Metal Oxides For Etlmentioning
confidence: 99%
See 1 more Smart Citation
“…Higher CB position of amorphous SnO 2 can lead to an improvement of V OC in PSCs. Recently, Lee et al further improved the planar PSCs up to 20.03% using the low‐temperature ALD process . They found that SnO 2 ETL prepared by low‐temperature processed ALD should be passivated because of its metal‐like nature.…”
Section: Metal Oxides For Etlmentioning
confidence: 99%
“…Surface modification methods, such as surface passivation and bilayer structure, are the most popular techniques currently used to improve the efficiency and stability of SnO 2 based planar PSCs . As mentioned earlier, the functional SAM modification is an effective method .…”
Section: Metal Oxides For Etlmentioning
confidence: 99%
“…The improvement in stability attributes to the better interface properties, followed by the mesoporous layer protection of the interface. As mentioned in many device stability reports for n‐i‐p structure, the long‐term stability of PSC is significantly affected by the ETL/perovskite interface . The fatal short plate in the n‐i‐p device structure originates from the electrons accumulated at the interface and the water/oxygen permeation from the periphery of the device.…”
Section: Figurementioning
confidence: 99%
“…Theimprovement in stability attributes to the better interface properties,f ollowed by the mesoporous layer protection of the interface.A sm entioned in many device stability reports for n-i-p structure,t he long-term stability of PSC is significantly affected by the ETL/perovskite interface. [16,24,25,42,43] Thef atal short plate in the n-i-p device structure originates from the electrons accumulated at the interface and the water/oxygen permeation from the periphery of the device. Therefore,i mproving the bonding ability of the ETL/perovskite interface can reduce the accumulation of electrons and water/oxygen permeation at the interface and thus enhance the stability of the n-i-p device.…”
Section: Angewandte Chemiementioning
confidence: 99%
“…In some cases, to overcome the instability problems, double-layer HTMs, such as CuSCN/Spiro-OMeTAD have been considered [21][22][23].ETL is also one of the key components of PSCs due to its important role in the interfacial electron extraction and the final photovoltaic performance [24][25][26][27]. Planar structures of PSCs, in both regular n-i-p and inverted p-i-n stacks, have been widely explored due to the simple manufacturing process at low temperature and excellent device performance [28]. In the n-i-p PSC configuration, TiO 2 has been used extensively because of the favorable alignment to the conduction band of the perovskite absorber [29].…”
mentioning
confidence: 99%