Efficient resonantly pumped 28-μm Er^3+:GSGG laser

Abstract

Efficient cw operation of the Er(3+):GSGG (4)I(11/2)?(4)I(13/2) laser transition at 2.8 microm is demonstrated at room temperature. The (4)I(11/2) upper laser state is directly pumped at 0.97 microm. The slope efficiency for the 2.8-microm laser is 36%, indicating a greater than unity quantum efficiency. This excess efficiency results from the recycling of population through upconversion out of the lower laser state.

Raman and Fluorescence Spectroscopy of CeO2, Er2O3, Nd2O3, Tm2O3, Yb2O3, La2O3, and Tb4O7

“…Er is commonly used as a laser source material and it has been well characterized for its fluorescence properties [21,22]. The Raman and emission spectra observed from Er 2 O 3 are present in Figures 3 and 4.…”

Growth and radiation resistant properties of 2.7–2.8μm Yb,Er:GSGG laser crystal

“…Er 3 + doped GSGG crystal is expected to become such a radiation resistant material that can be applied under the radiation environment. Stoneman and Esterowitz have reported the 2.8 mm Er 3 + :GSGG laser pumped by a Ti:sapphire laser tuned to 970 nm [7]. It is well known that all-solid-state laser systems pumped with laser diode (LD) permit a high pumping efficiency and compact setup, without the high consumption of electrical energy and the requirement for cooling system [8].…”

Er3+-doped Y2O3ceramic laser at ∼2.7μm with direct diode pumping of the upper laser level

“…Therefore, high power diode-pumped Mid-IR laser development can only rely on laser schemes with the terminal laser level well above the ground state and GaAs-based pumps -despite the optical-to-optical efficiency penalty associated with the large quantum defect of this laser scheme. In this case, the best one can hope for is to achieve the quantum-defectlimited operation efficiency, unless laser material with efficient upconversion-based mechanism of re-pumping of the upper laser level is identified (e.g., [3]). Nearly quantum defect-limited optical-to-optical slope efficiencies of ∼30% at low power levels were reported for Er-doped garnets with direct Ti:Sapphire pumping of the 4 I 11/2 upper laser level around 0.97 -0.98 μm and operating on the ∼ 3-μm 4 I 11/2 → 4 I 13/2 transitions [4].…”