Efficient RF extrinsic parameters extraction technique for finfets

Int J Numerical Modelling

Taibi

et al. 2023

Self Cite

This article proposes a new extraction technique to determine the GaN HEMT extrinsic capacitances over a wide frequency band on two different substrates, namely, the silicon and the silicon carbide. The proposed technique, which uses a small‐signal model equivalent circuit under cold pinch‐off operating conditions, is based on the proposal of a new small‐signal equivalent circuit which allows extracting first the extrinsic resistances and inductances. Then comes the extraction of extrinsic capacitances at high frequency. The proposed approach achieved successful results through close agreement with measured data up to 60 GHz.

\{Re (([], Z_{ij} ((), ω))) = Re (([], Z_{kl} ((), ω)))\}, where (i, j) \neq (k, l),

…”

Section: Proposed Extraction Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices

Zatout

Int J Numerical Modelling

Taibi

et al. 2023

Self Cite

“…The extrinsic capacitances could be extracted at frequencies below 5 GHz, this circuit reduces to that shown in Figure . The parasitic inductances and the pad resistances are neglected, therefore, the extrinsic capacitances are reached out at V ds = 0 V and V gs < V th through Equations .

Y_{11} = j ω true(C_{gso} + C_{gdo} true)

Y_{22} = j ω true(C_{dso} + C_{gdo} true)

Y_{12} = Y_{21} = - j ω C_{gd}

where

C_{gso} = C_{pga} + C_{pgi} + C_{gs}

C_{dso} = C_{pda} + C_{pdi} + C_{ds}

…”

Section: Extrinsic Parameters Extractionmentioning

confidence: 99%

An efficient and reliable small signal intrinsic parameters extraction for HEMT GaN devices

Micro & Optical Tech Letters

Saadi

Slimane

et al. 2018

Self Cite

To efficiently design GaN HEMT devices, a robust extraction of their intrinsic electrical equivalent circuit element values is critical. Aiming to accurately determine all intrinsic element values, a new elements‐based small‐signal equivalent circuit technique is introduced in this paper. Compared to the conventional GaAs‐based HEMT small‐signal model composed of 16 elements, the proposed equivalent circuit consists of two parasitic distributed interelectrode extrinsic capacitances and two additional feedback intrinsic resistances. The circuit element values were obtained starting from measured S‐parameters and using Y‐matrix transformations. The efficiency of the proposed methodology was demonstrated through excellent agreement between simulated and measured data up to 60 GHz.

Prediction of RF performances of advanced MOS transistors from DC and low frequency measurements

Micro & Optical Tech Letters

Esfeh

Saadi

et al. 2018

This work presents a new method to easily and rapidly extract RF figures of merit of MOSFET transistors. Using DC and low frequency measurements, the extrinsic resistances (Rg, Rs, Rd), the intrinsic conductances (gm, gd), and the input capacitance Cgg have been extracted. The evaluation of these parameters has enabled to compute 2 RF figures of merit (FoM), namely, the current gain cutoff frequency fT and the maximum oscillation frequency fmax. It has been shown that both the proposed method and the conventional RF extraction technique give quite close values.