“…However, cost-effective CMOS-compatible light sources are still hard to come by. Due to the stable luminescence in the ultraviolet to infrared bands, rare earth (RE) is frequently used in full-color displays, , phosphors, , and optical communication. − Among RE, erbium (Er) can emit photons at 1.54 μm through the intra-4f radiation transition from 4 I 13/2 to 4 I 15/2 , which is situated in the minimum-loss window of quartz fiber communication. − Because of this, optoelectronics will greatly benefit from the realization of the electroluminescence (EL) associated with Er 3+ ions. The thermionic collision mechanism is one of the effective ways to produce electroluminescence of Er 3+ ions at 1.54 μm. , Based on this mechanism, various light sources of Er 3+ ions have been developed, including Er-doped insulator devices, , reverse bias pn junction devices, , and electronic accelerator layer devices. − However, these Er-doped thermal electronic devices typically suffer from a high onset voltage issue that induces a strong electric field in certain areas of the device, greatly reducing the operating stability of the devices.…”