Efficient single-heterojunction Al/sub 0.27/Ga/sub 0.73/As/GaAs p-i-n photodiodes with 22-GHz bandwidths

Johnsen, C.A.; Sloan, Susan R.; Braun, David; Russell, J.; Zurakowski, M.P.; Lightner, M. J.; Kellert, F. G.; Patterson, G. A.; Koo, Rhee Jin; Derickson, Dennis; Bowers, John E.

doi:10.1109/16.119043

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Cited by 7 publications

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“…For the case where the light is absorbed in all region p, i, and n, which is the case of HJ photodiode, the photocurrent is composed of drift and diffusion of electrons and holes. The value of the calculated bandwidth is comparable to the measured values [5], [9][10].…”

Section: Resultssupporting

confidence: 74%

Frequency Response and Quantum Efficiency of PIN Photodiode

Zebda¹,

Qasaimeh²

1994

Journal of Optical Communications

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Frequency response and quantum efficiency analysis for front and back illumination of the PIN photodiode have been derived by solving the continuity equation. The frequency response and the quantum efficiency of double heterostructure junction (DHJ), single heterostructure junction (SHJ), and homojunction (HJ) PIN photodiode with different depletion-region widths have been calculated. The quantum efficiency of SHJ is better than both the DHJ and the HJ photodiodes. Bandwidth contour lines as a function of depletion region width and photodiode area are calculated for DHJ, SHJ and HJ photodiodes.

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