content; a similar effect has been found for other material systems. [21][22][23] As shown in Scheme 1, for a solid solution of ZnSe and CIGS, the VBM is expected to be deeper than that for CIGS, and the absorption edge longer than that for ZnSe. In this work, we investigated the PEC properties of (ZnSe) x (CIGS) 1-x thin-film photocathodes. The VBM was 0.25 V deeper than that for CIGS, and the onset potential was 0.89 V RHE , which is 0.17 V higher than that for CIGS. This higher onset potential allows PEC cells to be fabricated with a variety of photoanodes without the need for an external bias voltage. [24][25][26][27] Moreover, (ZnSe) 0.85 (CIGS) 0.15 contains much less of the rare metals indium and gallium. Therefore, (ZnSe) 0.85 (CIGS) 0.15 offers advantages over CIGS from the viewpoint of large-scale applications.Using a (ZnSe) 0.85 (CIGS) 0.15 photocathode with a BiVO 4 photoanode, [28] PEC overall water splitting without the need for an external bias voltage was demonstrated. The two-electrode cell produced stoichiometric amounts of H 2 and O 2 under simulated sunlight. The maximum STH was 0.91%, which is one of the highest values reported for a PEC cell containing a photoanode and a photocathode. [4]
Results and Discussion
PEC Properties of (ZnSe) 0.85 (CIGS) 0.15 PhotocathodesCurrent density versus potential curves for Pt and Pt/CdS modified (ZnSe) 0.85 (CIGS) 0.15 photocathodes are shown in Figure 1a. This composition was found to produce the largest photocurrent at 0.5 V RHE , as discussed in the next section.Whereas the photocathode modified by Pt alone showed a small cathodic photoresponse, the photocathode modified with both Pt and CdS exhibited a large photocurrent density of 6.5 mA cm −2 at 0 V RHE with a relatively high onset potential of 0.81 V RHE , which was defined as a cathodic photocurrent density of 0.05 mA cm −2 . It has been reported that an n-type CdS layer enhances the degree of charge separation by forming a p-n junction at the solid-liquid interface with the underlying p-type layer, which leads to a larger photocurrent and a higher onset potential because of the change in the band alignment. [29,30] As shown in Figure S1 (Supporting Information), the Pt/CdS/(ZnSe) 0.85 (CIGS) 0.15 photocathode showed no decay in the photocurrent at 0.1 V RHE over a period of more than 1 h. Such stable hydrogen evolution from water is similar to that reported for photocathodes based on chalcopyrites. [30][31][32] The incident photon to current conversion efficiency (IPCE) spectrum shown in Figure 1b indicates that the absorption edge is located around 900 nm. Despite the relatively high fraction of ZnSe, whose absorption edge is about 460 nm, the absorption edge for (ZnSe) 0.85 (CIGS) 0.15 is close to that for CIGS (≈1100 nm). Thus, due to its bandgap and onset potential, (ZnSe) 0.85 (CIGS) 0.15 is the promising material for sunlightdriven hydrogen production from water.Furthermore, insertion of 3-nm-thick Mo and Ti layers between the Pt and CdS improves the photocurrent around the onset potentia...