Efficient spectral domain analysis of generalized multistrip lines in stratified media including thin, anisotropic, and lossy substrates

Cano, G.; Medina, F.; Horno, M.

doi:10.1109/22.120093

Cited by 46 publications

(19 citation statements)

References 24 publications

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“…the semiconductor layer acts as a perfect electric conductor, because of the same reason. Our results are in agreement with [3] as shown by the circles, squares and '+' signs. alpha (dB/mm) (a) λg/λ 0 (b) α (dB/mm) as a function of frequency for a shielded MIS transmission line with parameters µr = 1, h 1 = 1µm, h 2 = 250µm, w = 80µm, a = 1cm, d = 1.249mm, c = a/2, ϵ r1 = 4, ϵ r2 = 12, σ 1 = 0 and σ 2 = 5, 1000 and 10000 S/m.…”

Section: Equivalent Modelsupporting

confidence: 92%

Equivalent model for shielded microstrip transmission lines over lossy layered substrates

Jain

Song

Kamgaing

et al. 2011

2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

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An equivalent model for a lossy shielded microstrip line on layered media is constructed by replacing the layered media with a single effective medium and a detailed analysis of its validity at different frequencies and different range of dimensions has been presented for application to on chip interconnects. The relative permittivity for a single layer microstrip which results in the same propagation constant for the dominant mode as the layered one at a given frequency is considered to be the equivalent. The results show that this model is frequency independent for layered structures when the given frequency and frequency of operation are less than the transition frequency (i.e. the frequency at which there is a significant change in the equivalent dielectric constant (ϵreq)). For frequencies higher than the transition frequency the equivalent model is not frequency independent but it gives good results for the higher order mode although it is derived using the dominant mode. Also it is seen that at low frequency ϵreq depends on the layers near to the signal metal but at higher frequencies it depends on the layer with the highest value of ϵr irrespective of its location w.r.t to the metal strip.

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Section: Equivalent Modelsupporting

confidence: 92%

Equivalent model for shielded microstrip transmission lines over lossy layered substrates

Jain

Song

Kamgaing

et al. 2011

2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

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“…as functions different thicknesses converge sequentially frequency and metallization thickness. (circle dc to the infinite-t curve to indicate that this Cano's results [7]; cross dots: Pramanick's results [8] layer works as an infinitely thick metal ground at high frequencies. It is of interest that, the thinner metallization layer is, the higher frequency region of the slow-wave mode is extended to.…”

Section: Formulationmentioning

confidence: 99%

Transient Signal Distortion in Silicon-Based Interconnects over Thin-Film Metal Ground Layers

Zhang

Song

2006

2006 IEEE Electrical Performane of Electronic Packaging

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This paper studies the effect of the embedded thin-film metallization layer, normally designed as ground plane, on the transient characteristics of pulse propagation in silicon-based multilayer interconnects. The spectral domain approach (SDA) and FFT are used to analyze an on-chip thin-film microstrip line (TFMSL) structure. It is found that such thin-film metallization can excite the slow wave. And the thickness factor has great influences on the signal distortion. IntroductionThe transient characterization of electric interconnect and metallization structures have become an essential issue in the design of nowadays silicon-based integrated circuits (ICs), such as highspeed digital VLSI circuits, multichip modules (MCMs) and radio-frequency integrated circuits (RFICs). Because the signals in such IC's interconnects spread from dc up to the millimeterwave frequency and even beyond, the dispersion and losses from interconnects and lossy substrates will induce the amplitude attenuation and the waveform distortion of signals. Some on-chip planar multilayer structures have been proposed to achieve size reduction as well as improved transmission characteristics: the TFMSL [1], patterned ground shield [2], etc., where thin-film metallization layers are embedded as ground planes. Unlike conventional lossless microstrip transmission lines, in which the higher harmonic of pulses (compared to the inflection frequency) will travel at a lower velocity than the lower harmonics, typical IC interconnects are fabricated on lossy silicon substrates so as to owe three possible signal-propagation modes: the slow-wave mode, the skin-effect mode, and the quasi-TEM mode [3]. At low frequencies, the slow-wave mode becomes dominant. Besides, since the minimized thin-film ground is composed of real metal with finite conductivity, its profile dimension may be comparable to the relative skin depth a at certain frequencies. Thus the electromagnetic (EM) energy may leak through it into substrates backing this thin film to trigger high dispersion. Although several authors used approximation formula or equivalent circuit models to study the wave propagation [1]-[4], it is still difficult to investigate Air the dispersive characterization with a circuit model over a t a broad frequency range, which is required for transient analysis. / / s In order to qualify the analysis of such thin-film metallization, the full-wave EM method is definitely a need for the accurate PEC Ground transient analysis and for the validation of CAD designs. Fig. 1. TFMSL-type interconnect on Si substrate and SiO2 layer; w: In this paper, the thickness effect of the thin-film metallization signal line width; t: metallization layer on the transient signal propagation is studied by the SDA thickness; sc and us: metal and Si [5] with the FFT technique. One TFMSL-type interconnection conductivity; (Si: 250 pim; cr: 12; is used to show that the transient pulse propagation is 7s: 5 S/m; Cu: o7c: 58x10 S/m;influenced by the presence of the thin-film metal ground layer. SiO2:...

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“…Several methods can be used to achieve this task, such as the quasi-static method [10], the finite-difference time-domain (FD-TD) method [11], the finite-element method (FEM) [12], and the MoM in both the spectral [13] and spatial [14] domains. In this article, the MoM formulated in the spatial domain is used.…”

Section: Problem Statementmentioning

confidence: 99%

Modeling of microstrip lines using neural networks: Applications to the design and analysis of distributed microstrip circuits

Soliman

Bakr

Nikolova

2004

Int J RF and Microwave Comp Aid Eng

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Efficient spectral domain analysis of generalized multistrip lines in stratified media including thin, anisotropic, and lossy substrates

Cited by 46 publications

References 24 publications

Equivalent model for shielded microstrip transmission lines over lossy layered substrates

Equivalent model for shielded microstrip transmission lines over lossy layered substrates

Transient Signal Distortion in Silicon-Based Interconnects over Thin-Film Metal Ground Layers

Modeling of microstrip lines using neural networks: Applications to the design and analysis of distributed microstrip circuits

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