Efros-Shklovskii type variable range hopping conduction and magnetoresistance in p-type CuGa 3 Te 5

Atomic Layer Deposition of Transparent and Conducting p-Type Cu(I) Incorporated ZnS Thin Films: Unravelling the Role of Compositional Heterogeneity on Optical and Carrier Transport Properties

“…Hence, the diverging nature of ρ­( T ) at T → 0 and high ρ r values justify that these materials are in the insulating regime of the IMT. , The variable range hopping transport equation is used to further investigate the transport mechanism in these samples and can be expressed as where the power p is the deterministic factor of the activation process. The resistivity curves for these materials (100:1 and 90:1) are fitted (see Figure S13a) well throughout the temperature range for p = 1/2 indicating it to be a Efros and Shklovskii type variable range hopping (ES-type VRH) transport mechanism observed in polycrystalline films. − In this regime, charge transport is mostly governed by the intragrain conductance with negligible contribution from the phase-segregated CuS. This is well supported by the UV–vis measurements where little change in the transmission property is noticed and no detectable (XRD analysis, Figure ) phase-segregated CuS is found.…”

Possibility of controlling the conduction mechanism by choosing a specific doping element in a praseodymium manganite system

“…As reported in our previous work, 24 the parent sample Pr 0.7 Ca 0.3 -MnO 3 presents a unit cell volume V ¼ 227. 52(3) A 3 and a bond angle hMn-O-Mni ¼ 157.55 (4). Comparing such parameters by the obtained results in Table 1, we found that the substitution of Mn 3+ by 10% Co 3+ induces a reduction in Mn 3+ ions which changes the unit cell volume (V ¼ 226.96 A 3 ).…”

“…: For the case of the Shklovskii-Efros regime p ¼ 1/2 and 33,[50][51][52] In our present work, the type of the activated VRH conduction mechanism can be estimated from the evolution of ln(R) with T À1/4 (Fig. 3(a-d)) and the variation of ln(RT À1/2 ) as a function of T À1/2 (Fig.…”

Electrical conductivity and dielectric properties of Sr doped M-type barium hexaferrite BaFe12O19

“…There are several models, which can explain the ac-conduction mechanism in the disordered materials. For example, Mott variable range hopping conductivity, 60 Efros-Shklosvkii conduction, 61 ac-conduction mechanism with potential fluctuations. 62 However, we believe that the Correlated Barrier Hopping (CBH) is the most suitable model to describe the conductivity in this temperature region.…”