“…This value was higher than those obtained for devices without additives (51 μs) and the DIO-processed device (55 μs), suggesting reduced trap density in the DICO-processed thick-film OSCs. The L D could also be obtained through the Einstein relation: 69
where μ is the charge-carrier mobility, k is the Boltzmann constant, and q is the elementary charge. The L D values for electrons and holes in the devices treated without additives and with DIO were calculated to be 225/246 and 293/347 nm, respectively, while improved L D values were obtained for the DICO-processed device (454/520 nm).…”