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Colella, Michael; Lumpkin, G. R.; Vance, E. R.; Hong, Gye-Won; Kim, Chan-Joong

doi:10.1023/a:1020949627128

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…To determine the valence state of cerium the Ce M 4,5 edge was acquired and the normalized integrated intensity ratios of M 5 and M 4 edges was utilized as discussed and implemented by others. [ 24,25 ] Density Functional Theory (DFT) : To better understand the origin of the valence changes at the CeO 2 /STO interface, we conducted spin-polarized DFT, [ 26,27 ] calculations using the PBE [ 28 ] exchange correlation functional as implemented in the Vienna ab-initio simulation package (VASP). [ 29,30 ] We have employed the rotationally invariant form of DFT+U.…”

Section: Methodsmentioning

confidence: 99%

Linking Interfacial Step Structure and Chemistry with Locally Enhanced Radiation‐Induced Amorphization at Oxide Heterointerfaces

Aguiar

Dholabhai

et al. 2014

Adv Materials Inter

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Nanostructured materials and their interfaces have attracted recent interest for their functionality in a wide variety of different applications. However, the origins of these properties in several instances remain unknown. One promising aspect of nanomaterials is their role in materials design for mitigating radiation damage. In particular, engineered radiation tolerant materials would exploit the presence of internal interfaces to act as recombination centers and suppress damage accumulation. Realizing this promise, however, requires a fundamental understanding of how radiation‐induced defects interact with interfaces. Thus, studying the interfacial atomic structure and chemistry before and after irradiation is critical. In this study, we have performed transmission electron microscopy on a series of pristine and ion‐irradiated oxide interfaces to probe radiation‐induced effects. The CeO2/SrTiO3 interface, chosen as a model system for these studies, is characterized by differences in SrTiO3 terminations or steps. Our salient result is that steps are centers for preferential amorphization in SrTiO3, which we attribute to defect flow across the interface induced by non‐stoichiometry in CeO2. The study concludes the interfacial atomic ordering in the form of steps thereby modifies the response to ion irradiation and suggests interface patterning as another parameter to functionalize radiation tolerant materials.

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Section: Methodsmentioning

confidence: 99%

Linking Interfacial Step Structure and Chemistry with Locally Enhanced Radiation‐Induced Amorphization at Oxide Heterointerfaces

Aguiar

Dholabhai

et al. 2014

Adv Materials Inter

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show abstract

“…Indeed, the presence of Ce (III) in the pristine LCeNT in the present work is unambiguously revealed by the EELS analysis (Figure 5a), though cerium doping into the A site of titanate was realized through the solid-state synthesis in air. The characteristics and intensity ratio of Ce M4, M5 edges in EELS have been used to determine the oxidation states of Ce [36][37][38].…”

Section: Mechanistic Understanding Of Ceo2 Exsolutionmentioning

confidence: 99%

In-situ construction of ceria-metal/titanate heterostructure with controllable architectures for efficient fuel electrochemical conversion

Hui

et al. 2021

Applied Catalysis B: Environmental

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Determination of chromium valence over the range Cr(0)–Cr(VI) by electron energy loss spectroscopy

2006

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Untitled

Cited by 3 publications

References 5 publications

Linking Interfacial Step Structure and Chemistry with Locally Enhanced Radiation‐Induced Amorphization at Oxide Heterointerfaces

Linking Interfacial Step Structure and Chemistry with Locally Enhanced Radiation‐Induced Amorphization at Oxide Heterointerfaces

In-situ construction of ceria-metal/titanate heterostructure with controllable architectures for efficient fuel electrochemical conversion

Determination of chromium valence over the range Cr(0)–Cr(VI) by electron energy loss spectroscopy

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