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Забродский, П. Ф.; Киричук, В. Ф.; Germanchuk, V. G.; Nodel, M L; Rush, M.L.; Molotkov, A. O.; Mal'tseva, G. M.; Osipov, O. V.

doi:10.1023/a:1023450013591

Cited by 5 publications

(4 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

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“…against T on a logarithmic scale 49,59 ( Figure S8 in the Supporting Information), in which the dynamic range of conductivity is ~10 4 . This analysis reveals, however, that the "1000+1000"…”

Section: From Equation 3 We Estimatementioning

confidence: 99%

ZnO Nanocrystal Networks Near the Insulator–Metal Transition: Tuning Contact Radius and Electron Density with Intense Pulsed Light

Greenberg¹,

Robinson²,

Reich

et al. 2017

Nano Lett.

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Networks of ligand-free semiconductor nanocrystals (NCs) offer a valuable combination of high carrier mobility and optoelectronic properties tunable via quantum confinement. In principle, maximizing carrier mobility entails crossing the insulator-metal transition (IMT), where carriers become delocalized. A recent theoretical study predicted that this transition occurs at nρ ≈ 0.3, where n is the carrier density and ρ is the interparticle contact radius. In this work, we satisfy this criterion in networks of plasma-synthesized ZnO NCs by using intense pulsed light (IPL) annealing to tune n and ρ independently. IPL applied to as-deposited NCs increases ρ by inducing sintering, and IPL applied after the NCs are coated with AlO by atomic layer deposition increases n by removing electron-trapping surface hydroxyls. This procedure does not substantially alter NC size or composition and is potentially applicable to a wide variety of nanomaterials. As we increase nρ to at least twice the predicted critical value, we observe conductivity scaling consistent with arrival at the critical region of a continuous quantum phase transition. This allows us to determine the critical behavior of the dielectric constant and electron localization length at the IMT. However, our samples remain on the insulating side of the critical region, which suggests that the critical value of nρ may in fact be significantly higher than 0.3.

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Section: From Equation 3 We Estimatementioning

confidence: 99%

ZnO Nanocrystal Networks Near the Insulator–Metal Transition: Tuning Contact Radius and Electron Density with Intense Pulsed Light

Greenberg¹,

Robinson²,

Reich

et al. 2017

Nano Lett.

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“…Si:(P,B)] were used, which allows one to vary the amount of disorder and the electron concentration independently. On these samples, values of the conductivity exponent s in the vicinity of s ≈ 1 were reported (Field and Rosenbaum, 1985;Hirsch et al, 1988;Thomas et al, 1982;Zabrodskii and Zinov'eva, 1984) with scattering of values and the uncertainties of the order of 10%. A similar result was obtained for an amorphous material Nb x Si 1−x .…”

mentioning

confidence: 92%

Anderson transitions

2008

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The physics of Anderson transitions between localized and metallic phases in disordered systems is reviewed. The term "Anderson transition" is understood in a broad sense, including both metalinsulator transitions and quantum-Hall-type transitions between phases with localized states. The emphasis is put on recent developments, which include: multifractality of critical wave functions, criticality in the power-law random banded matrix model, symmetry classification of disordered electronic systems, mechanisms of criticality in quasi-one-dimensional and two-dimensional systems and survey of corresponding critical theories, network models, and random Dirac Hamiltonians. Analytical approaches are complemented by advanced numerical simulations.1 A remarkable exception is the behavior of ξ in disordered wires of the chiral symmetry, see Eqs. (5.21), (5.22).

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“…The compensating impurity (gallium) dose was introduced by means of transmutation neutron doping [6]. The ordering of impurity spins was studied by electron spin resonance (ESR) techniques in the in the temperature interval of 2 K < T < 100 K. All problems connected with the samples conductivity and with the magnetic susceptibility determination in the conducting semiconductors were published in [7].…”

Section: Resultsmentioning

confidence: 99%

“…These electrons move freely over the crystal, and the term due to the kinetic exchange is predominant in formula (6). This implies that the interacting spins are coupled in nonmagnetic consistence.…”

Section: Discussionmentioning

confidence: 99%