2021
DOI: 10.1007/s00339-021-04912-z
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Elaboration and characterization of a-SiC nanowires for CO2 sensor

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“…Silicon carbide (SiC) nanowires exhibit several outstanding characteristics higher than those of the micro SiC, such as ultra-high hardness, high melting point, thermal stability and corrosion resistance, low thermal expansion coefficient [1,2], large specific surface area, high electron mobility [3,4] and photoluminescence properties [5]. Therefore, SiC nanowires play an important role to create nanodevices construction, for example in transmitters, effect transistors and sensor nanoscales [6][7][8], microwave absorbers, optoelectronic devices [9], and micro-capacitor [10].…”
Section: Introductionmentioning
confidence: 99%
“…Silicon carbide (SiC) nanowires exhibit several outstanding characteristics higher than those of the micro SiC, such as ultra-high hardness, high melting point, thermal stability and corrosion resistance, low thermal expansion coefficient [1,2], large specific surface area, high electron mobility [3,4] and photoluminescence properties [5]. Therefore, SiC nanowires play an important role to create nanodevices construction, for example in transmitters, effect transistors and sensor nanoscales [6][7][8], microwave absorbers, optoelectronic devices [9], and micro-capacitor [10].…”
Section: Introductionmentioning
confidence: 99%