“…Silicon carbide (SiC) nanowires exhibit several outstanding characteristics higher than those of the micro SiC, such as ultra-high hardness, high melting point, thermal stability and corrosion resistance, low thermal expansion coefficient [1,2], large specific surface area, high electron mobility [3,4] and photoluminescence properties [5]. Therefore, SiC nanowires play an important role to create nanodevices construction, for example in transmitters, effect transistors and sensor nanoscales [6][7][8], microwave absorbers, optoelectronic devices [9], and micro-capacitor [10].…”