2019
DOI: 10.1016/j.jpcs.2018.09.002
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Elastic and thermodynamic properties of α-Bi2O3 at high pressures: Study of mechanical and dynamical stability

Abstract: The elastic and thermodynamic properties of the monoclinic polymorph of bismuth oxide (-Bi 2 O 3 ); aka mineral bismite, have been theoretically investigated both at room pressure and under hydrostatic compression by means of first principles calculations based on density functional theory. In this work, the elastic stiffness coefficients, elastic moduli, Poisson's ratio, B/G ratio, elastic anisotropy indexes (A B , A G , A 1 , A 2 , A 3 , A U ) and directional dependence of Young modulus and linear compressi… Show more

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Cited by 19 publications
(14 citation statements)
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“…A similar trend regarding the Vickers hardness H V versus pressure was observed in compound crystals with metallic bonding, MB 12 (M = Zr, Hf, Y, Lu) with UB 12 ‐type structure, indium antimonide semiconducting materials, cadmium telluride semiconductor compounds, and several hard and superhard materials (diamond, c‐BN, etc) . Nevertheless, an opposite trend in H V versus pressure was observed in the data of Gomis et al . for bismuth oxide (α‐Bi 2 O 3 ) material and in the data of Pan et al .…”
Section: Resultssupporting
confidence: 72%
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“…A similar trend regarding the Vickers hardness H V versus pressure was observed in compound crystals with metallic bonding, MB 12 (M = Zr, Hf, Y, Lu) with UB 12 ‐type structure, indium antimonide semiconducting materials, cadmium telluride semiconductor compounds, and several hard and superhard materials (diamond, c‐BN, etc) . Nevertheless, an opposite trend in H V versus pressure was observed in the data of Gomis et al . for bismuth oxide (α‐Bi 2 O 3 ) material and in the data of Pan et al .…”
Section: Resultssupporting
confidence: 72%
“…As a matter of fact, some theoretical models established for calculating the hardness of materials such as compound crystals with metallic bonding, MB 12 (M = Zr, Hf, Y, Lu) with UB 12 ‐type structure, indium antimonide semiconducting compounds, and cubic zinc‐blende cadmium telluride semiconductor compounds, as well as other approaches correlating the hardness H to the bulk modus B , showed that H increases as pressure is elevated. However, other models based on the Pugh's ratio ( G/B ) showed that H decreases with increasing pressure . The increase of H with rising pressure could be justified by two reasons: the first reason is the increase of the rigidity (due to the increase of B ) and the Debye temperature θ D with increasing pressure, and the second reason is the decrease of H with rising temperature (thermal softening) .…”
Section: Resultsmentioning
confidence: 96%
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