In this work, we performed a first-principles
investigation of
the phase stability, dopant formation energy and Na+ conductivity
of pristine and doped cubic Na3PS4 (c-Na3PS4). We show that pristine c-Na3PS4 is an extremely poor Na ionic conductor, and the introduction
of Na+ excess is the key to achieving reasonable Na+ conductivities. We studied the effect of aliovalent doping
of M4+ for P5+ in c-Na3PS4, yielding Na3+x
M
x
P1–x
S4 (M = Si,
Ge, and Sn with x = 0.0625; M = Si with x = 0.125). The formation energies in all the doped structures with
dopant concentration of x = 0.0625 are found to be
relatively low. Using ab initio molecular dynamics
simulations, we predict that 6.25% Si-doped c-Na3PS4 has a Na+ conductivity of 1.66 mS/cm, in excellent
agreement with previous experimental results. Remarkably, we find
that Sn4+ doping at the same concentration yields a much
higher predicted Na+ conductivity of 10.7 mS/cm, though
with a higher dopant formation energy. A higher Si4+ doping
concentration of x = 0.125 also yields a significant
increase in Na+ conductivity with an even higher dopant
formation energy. Finally, topological and van Hove correlation function
analyses suggest that the channel volume and correlation in Na+ motions may play important roles in enhancing Na+ conductivity in this structure.