Elastic properties of aluminum nitride

Gerlich, D.; Dole, S. L.; Slack, Glen A.

doi:10.1016/0022-3697(86)90039-9

Cited by 139 publications

(56 citation statements)

References 17 publications

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“…Chaudhuri et al (1995) calculated the biaxial modulus for A1N in different planes and directions. The elastic modulus and the Poisson's ratio used in this calculations are E A[N -308 GPa, v A1N -0.18, for the A1N thin film (Gerlich et al 1986) and E si = 125 GPa, v si = 0.28 for the Si(100) substrate. A Phillips X-Pert Pro MRD diffractometer 3 with a two-bounce hybrid monocromator (25 arcsec) and an open detector was used to measure the curvature radius and the crystallographic properties of the synthesized thin films.…”

Section: Methodsmentioning

confidence: 99%

Effect of substrate–target distance and sputtering pressure in the synthesis of AlN thin films

2011

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In this work, we analyze the influence of the processing pressure and the substrate-target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin films deposited on Si(100) wafers. The crystalline quality of AIN has been characterized by high-resolution X-ray diffraction (HR-XRD). The films exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvaturean optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin films of different thickness. The degree of c-axis orientation was not affected by the target-substrate distance as it was varied in between 30 and 70 mm.

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Section: Methodsmentioning

confidence: 99%

Effect of substrate–target distance and sputtering pressure in the synthesis of AlN thin films

2011

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“…This was also observed as the fraction of TiC increased and the amount of amorphous phase decreased in Ti-Si-C films. 51 The value for the ZrAlN film is after annealing at 1400°C 348 GPa, between the values for c-ZrN (460 GPa 53,54 ) and h-AlN (300 GPa 55,56 ).…”

Section: Mechanical Propertiesmentioning

confidence: 99%

Phase transformations in nanocomposite ZrAlN thin films during annealing

et al. 2012

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Nanocomposite Zr 0.52 Al 0.48 N 1.11 thin films consisting of crystalline grains surrounded by an amorphous matrix were deposited using cathodic arc evaporation. The structure evolution after annealing of the films was studied using high-energy x-ray scattering and transmission electron microscopy. The mechanical properties were characterized by nanoindentation on as-deposited and annealed films. After annealing in temperatures of 1050-1400°C, nucleation and grain growth of cubic ZrN takes place in the film. This increases the hardness, which reaches a maximum, while parts of the film remain amorphous. Grain growth of the hexagonal AlN phase occurs above 1300°C.

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“…Useful data for aluminum nitride have also been provided in the longitudinal and lateral shock wave measurements of Brar, et al (1992), and shock compression studies of phase transformations by Nakamura and Mashimo (1994). Elastic properties and their pressure and temperature dependence have been investigated by Gerlich, et al (1986), while Van Camp, et al (1991) have explained equation of state issues in aluminum nitride as well as other binary nitrides. Shock and equation-of-state properties of aluminum nitride have recentiy been reviewed by Dandekar et al, (1994).…”

Section: Shock Phase Transformation and Release Properties Of Aluminumentioning

confidence: 99%

Dynamic properties of ceramic materials

Grady

1995

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Elastic properties of aluminum nitride

Cited by 139 publications

References 17 publications

Effect of substrate–target distance and sputtering pressure in the synthesis of AlN thin films

Effect of substrate–target distance and sputtering pressure in the synthesis of AlN thin films

Phase transformations in nanocomposite ZrAlN thin films during annealing

Dynamic properties of ceramic materials

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