Elastic properties of indium tin oxide films

Wittkowski, T.; Jorzick, J.; Seitz, H.; Schröder, Bernd; Jung, K.; Hillebrands, B.

doi:10.1016/s0040-6090(01)01373-6

Cited by 31 publications

(23 citation statements)

References 13 publications

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“…So, the calculated bulk modulus have been compared to 99±32 GPa of ITO films. 47 It is seen that our data [ Table I] is much larger than that of the ITO films and consequently, are hardly compressible than the Sn doped In 2 O 3 films. figure it is clear that CB minimum is located at the Γ point for all structures and the VB maximum is located in between Γ−H, Γ−P, and Γ−N points for The band gap is an important parameter for characterization of TCO materials.…”

Section: Resultsmentioning

confidence: 73%

Phase stability, electronic structure, and optical properties of indium oxide polytypes

et al. 2007

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Structural phase stability, electronic structure, optical properties, and high-pressure behavior of polytypes of In 2 O 3 in three space group symmetry I2 1 3, Ia3 and R3 are studied by first-principles density functional calculations. From structural optimization studies lattice and positional parameters have been calculated, which are found to be in good agreement with the corresponding experimental data. In 2 O 3 of space group symmetry I2 1 3 and Ia3 are shown to undergo a pressureinduced phase transition to IO3 at pressures around 3.83 GPa. From analysis of band structure it is found that In 2 O 3 of space group symmetry I2 1 3 is indirect band gap semiconductors, while the other phase of space group Ia3 is direct band gap. The calculated carrier effective masses for all these three phases are compared with available experimental and theoretical values. From chargedensity and electron localization function analysis it is found that these phases have dominant ionic bonding. The magnitude of the absorption and reflection coefficients of In 2 O 3 with space group Ia3 and R3 are small in the energy range 0-5 eV, so that these materials can re regarded and classified as transparent.

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Section: Resultsmentioning

confidence: 73%

Phase stability, electronic structure, and optical properties of indium oxide polytypes

et al. 2007

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“…Usually, one of the few available literature values for the moduli is used. For ITO, values of 88:4611:3 GPa (Brillouin light scattering), 26 92 GPa (Vickers indentation), 26 99.8 6 13.6, 27 112 GPa (nanoindentation on ITO coatings deposited on glass substrates), 28 116 GPa, 29 and 118 GPa 30 have been given in the literature. For SiN derived from PECVD processes, it is important to realize that film density, hydrogen content, internal stress, and elastic properties have all been shown to be correlated.…”

Section: Effect Of Internal Strain On Determination Of E Cmentioning

confidence: 99%

Direct measurement of intrinsic critical strain and internal strain in barrier films

Vellinga

Hosson

Bouten

2011

Journal of Applied Physics

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Resistance measurements during uniaxial tensile deformation of very thin (10 nm) conducting oxide films deposited on 150 nm SiN films on polyethylene naphthalate are discussed. It is first shown that certain characteristics of resistance versus strain curves are representative for the fracture behavior of the SiN film and not for that of the thin conducting oxide film. Subsequently, it is shown that the hysteresis in curves of resistance as a function of strain offers a way to directly measure the intrinsic critical strain of the SiN film without the need to determine internal strains from independent (curvature) measurements that rely on knowledge of moduli and geometry. The method should be applicable, in general, to measure intrinsic critical strain and residual strains of thin brittle films on polymers. Advantages and limitations of the method are discussed.

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“…The lines indicate the best fit to the experimental data. The corresponding parameters are the stiffness constants c11 = 65 GPa, c13 = 7 GPa, c33 = 92 GPa, c44 = 53 GPa and the mass density ñ = 2.14 g/cm 3 . The dotted line represents the velocity of the substrate Rayleigh mode.…”

Section: Resultsmentioning

confidence: 99%

“…The apparatus has been described in detail earlier [3]. On account of the unbalanced magnet configuration a rather high flux of argon ions can be extracted from the plasma by applying a rf bias to the substrate.…”

Section: Sample Preparationmentioning

confidence: 99%

Characterization of elastic properties of hard carbon and boron nitride films using the Brillouin light scattering technique

et al. 2000

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The elastic properties of thin graphitic carbon and hexagonal boron nitride films have been determined by Brillouin light scattering from thermally excited surface acoustic phonons. The carbon films have been grown by plasma beam deposition at 420 o C. The BN films have been deposited by rf-magnetron sputtering and simultaneous ion plating. In the case of amorphous carbon a layered substructure has been found with a rather compliant intermediate layer at the interface. The stiffness of the films increases with increasing ion energy. As for carbon the BN coatings exhibit a pronounced elastic anisotropy indicating a preferred orientation of the hexagonal planes perpendicularly to the surface. The comparison of the Young´s moduli determined by load indentation and by Brillouin light scattering allows the conclusion that the material is composed of two or more components of different stiffness.Films grown by magnetron sputtering or plasma beam deposition are in general nanocrystalline or amorphous and do not exhibit single crystal properties. Their elastic properties need to be determined experimentally because they depend strongly on the deposition conditions, and they can in general not be derived from theoretical considerations. Brillouin light scattering (BLS) is a well established technique to obtain information on elastic properties of thin films by measuring the frequency shift of light scattered inelastically from phonons [1,2]. The information obtained by BLS usually allows to determine several independent elements of the elastic tensor and to reveal the existence of an interlayer between film and substrate. Sample PreparationBoron nitride films have been grown on (100)-silicon by 13.56 MHz rf magnetron sputtering from a polycrystalline stoichiometric BN target in a pure argon atmosphere of about 4·10 -4 mbar. The apparatus has been described in detail earlier [3]. On account of the unbalanced magnet configuration a rather high flux of argon ions can be extracted from the plasma by applying a rf bias to the substrate. The energy of the ions was near 130 eV. At an ion current density of 1.2 mA/cm 2 at the substrate the growth rate was found to be 6.2 nm/min. The argon ion flux to the substrate was about a factor of 7 larger than the flux of boron and nitrogen atoms contributing to the film growth. The substrate temperature was held constant at 350 o C. Under these conditions boron nitride films grow in the hexagonal modification [4,5] which has been controlled by infrared spectroscopy. Carbon films with a hydrogen content of 5% have been produced by plasma beam deposition on a (001) silicon substrate heated to 420 o C. The plasma beam source, which has been described in detail previously in [6], consists of a capacitive, magnetically confined r.f. discharge. Acetylene was used as working gas because it forms almost exclusively C 2 H 2 + -ions in low pressure plasmas [6]. The fraction of this ion species was larger than 95% at a background pressure of 6·10 -5 mbar. The films presented here were grown at ion e...

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Elastic properties of indium tin oxide films

Cited by 31 publications

References 13 publications

Phase stability, electronic structure, and optical properties of indium oxide polytypes

Phase stability, electronic structure, and optical properties of indium oxide polytypes

Direct measurement of intrinsic critical strain and internal strain in barrier films

Characterization of elastic properties of hard carbon and boron nitride films using the Brillouin light scattering technique

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