Elastic strain engineered nanomechanical GaN resonators with thermoelastic dissipation dilution up to 600 K

Abstract

Conventionally, mechanical resonators exhibit evident degradation in quality factor and large frequency fluctuation at elevated temperatures above room temperature. Here, we show that the quality factor of up to 105 of a highly stressed GaN on Si nanomechanical resonators experiences little change as temperature increasing to 600 K and the temperature coefficient of the resonance frequency (TCF) is as low as several ppm/K, several times lower than those of the conventional GaN mechanical resonators. The high quality factor and low TCF at high temperatures are attributed to the high stress and the geometrical nonlinearity of dynamical strain in the GaN resonator, where the dissipation caused by the change of the material properties with the increasing temperature is compensated by the increased stiffness. This observation violates the universality of thermal energy dissipation in mechanical resonators. The results provide a universal strategy for engineering nanomechanical resonators with ultrahigh sensitivity and ultralow noise.

Highly Reliable Diamond MEMS Dual Sensor for Magnetic Fields and Temperatures with Self‐Recognition Algorithms

“…The temperature responsivity of a microresonator is referred to as the temperature coefficient of resonance frequency ( TCF ). For a compact microresonator, the TCF indicates the relative shift of resonance frequency with temperature, which is indicated as, [ 34–36 ] $$$$\begin{equation}TCF\ = \frac{{\partial f}}{{{{f}_0}\partial T}}\ \end{equation}$$$$ f 0 is the resonance frequency at room temperature (25 °C). Utilizing the Δ E effect, the magnetic field response of the multilayer resonator sensor is characterized as the shift in resonance frequency, as shown, $$$$\begin{equation}{{\Delta}}{{f}_H} = \ \left| {{{f}_H} - {{f}_0}} \right|\end{equation}$$$$where f H and f 0 are resonance frequencies of the magnetic sensor at the magnetic fields of H and 0 mT , respectively.…”

“…The temperature responsivity of a microresonator is referred to as the temperature coefficient of resonance frequency (TCF). For a compact microresonator, the TCF indicates the relative shift of resonance frequency with temperature, which is indicated as, [34][35][36] TCF = 𝜕f f 0 𝜕T…”

Micromachined Mechanical Resonant Sensors: From Materials, Structural Designs to Applications

“…[96] Due to their high conductivity, semiconductor nanowires and carbon nanotubes allow electrical currents to pass through them, providing opportunities for utilizing electrical signals for excitation and detection rather than relying on optical methods. A wide range of nanowires and nanobridges made from various MEMS/NEMS materials, including Si, [93,[97][98][99] SiC [100,101] and GaN, [102][103][104] have been employed as sensing element in MMR sensors.…”