Elastocapillary Force Induced Alignment of Large Area Planar Nanowires

Abstract

Achieving large scale precise positioning of the vapor−liquid−solid (VLS) nanowires is one of the biggest challenges for mass production of nanowire-based devices. Although there have been many noteworthy progresses in postgrowth nanowire alignment method development over the past few decades, these methods are mostly suitable for low density applications only. For high density applications such as transistors, both high yield and density are required. Here, we report an elastocapillary force-induced nanowire-aligning method that is extremely simple, clean, and can achieve single/multiple nanowire arrays with up to 98.8% yield and submicron pitch between the nanowires.

Atomic-Scale Characterization of Planar Selective-Area-Grown InAs/InGaAs Nanowires

“…Recent advances in NW growth methodologies have improved their compatibility with current planar semiconductor processing by producing in-plane NWs on the substrate surface, − thus facilitating NW functionalization and large-scale growth. However, these advances have increased the difficulty of characterizing the NWs using APT.…”