ELDRS in bipolar linear circuits: A review

Pease,; Schrimpf,; Fleetwood,

doi:10.1109/radecs.2008.5782678

Cited by 30 publications

(22 citation statements)

References 48 publications

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“…The cases presented here, in addition to previous examples in [1], illustrate the significance and pervasiveness of low dose rate enhancement at dose rates lower than 10 mrad(Si). The ELDRS-free devices, as shown for the LM158 and LM117, are also susceptible to enhanced degradation at the lower dose rates.…”

Section: Discussionmentioning

confidence: 57%

“…The physical mechanisms for ELDRS have been discussed in several previous publications [1], [2]. ELDRS has introduced new challenges for radiation hardness assurance.…”

Section: Introductionmentioning

confidence: 99%

“…The primary challenge is the significant irradiation time required to examine a part for ELDRS, which is a burden to a project's schedule and budget. There are several proposed accelerated tests, such as the elevated temperature irradiation and the switched-dose rate method [1], [3]. The elevated temperature method is inconsistent across a variety of devices, for example the LM2941 [4].…”

Section: Introductionmentioning

confidence: 99%

“…In fact, many linear bipolar devices exhibit significant degradation for dose rates less than 10 mrad(Si)/s [1], [5]. For example, the LDR EF for the LM324 increases by a factor of 6 from 5 mrad(Si)/s (EF = 2) to 2 mrad(Si)/s (EF = 12).…”

Section: Introductionmentioning

confidence: 99%

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The Effects of ELDRS at Ultra-Low Dose Rates

Chen

Forney

Pease³

et al. 2010

2010 IEEE Radiation Effects Data Workshop

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Abstract-We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes of the dose rate effects vary. The TL750L, a commercial voltage regulator, showed dose rate dependence in the functional failures, with initial failures occurring after 10 krad(Si) for the parts irradiated at 0.5 mrad(Si)/s. The RH1021 showed an increase in low dose rate enhancement by 2× at 5 mrad(Si)/s relative to 8 mrad(Si)/s and high dose rate, and parametric failure after 100 krad(Si). Additionally the ELDRS-free devices, such as the LM158 and LM117, showed evidence of dose rate sensitivity in parametric degradations. Several other parts also displayed dose rate enhancement, with relatively lower degradations up to ~ 15 to 20 krad(Si). The magnitudes of the dose rate enhancement will likely increase in significance at higher total dose levels.

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Section: Discussionmentioning

confidence: 57%

“…The physical mechanisms for ELDRS have been discussed in several previous publications [1], [2]. ELDRS has introduced new challenges for radiation hardness assurance.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

The Effects of ELDRS at Ultra-Low Dose Rates

Chen

Forney

Pease³

et al. 2010

2010 IEEE Radiation Effects Data Workshop

Self Cite

View full text Add to dashboard Cite

show abstract

“…It is known that low dose rate irradiation can cause the response of tested semiconductor devices and integrated circuits, which differs from that obtained at high dose rate [1,2]. Therefore, it is very important to consider this fact during the planning of radiation tests of devices and circuits intended for space application, because laboratory tests are typically carried out at dose rates, which are much more higher (a few orders of magnitude) than those proper to space environment.…”

Section: Introductionmentioning

confidence: 99%