2011
DOI: 10.1016/j.jallcom.2011.07.098
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Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method

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Cited by 23 publications
(13 citation statements)
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“…36 Furthermore, CCTO possesses both characteristics (low and high charge mobility) depending on the external applied field. 30,34 Thus, these results indicate that the main transport mechanism in CCTO/Pt interfaces can be described by the thermionicemission theory at high voltages due to the high charge mobility of CCTO. On the other hand, the diffusion theory could describe better the main transport mechanism due to the low charge mobility of CCTO at low voltages.…”
Section: -mentioning
confidence: 63%
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“…36 Furthermore, CCTO possesses both characteristics (low and high charge mobility) depending on the external applied field. 30,34 Thus, these results indicate that the main transport mechanism in CCTO/Pt interfaces can be described by the thermionicemission theory at high voltages due to the high charge mobility of CCTO. On the other hand, the diffusion theory could describe better the main transport mechanism due to the low charge mobility of CCTO at low voltages.…”
Section: -mentioning
confidence: 63%
“…In addition, Ramirez et al reported recently that CCTO thin films prepared on a Au/CCTO/Pt set-up at low temperatures (500-600 C) do not exhibit rectifying behavior in currentvoltage measurements. 30 Moreover, our results show that the CCTO film prepared on a LNO buffer layer displays an ohmic contact with bottom (LNO) and top (Au) electrodes, and the sensor characterization reveals that CCTO film prepared by the PPM has n-type conductivity. Thus, our hypothesis is that the top (Au) electrode forms an ohmic contact, and the bottom (Pt) electrode and CCTO film form a MS rectifying interface influenced by the annealing temperature.…”
Section: B Rectifying Behaviormentioning
confidence: 67%
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“…http://dx.doi.org/10.1016/j.jallcom.2013.08.210 water and was measured using a Brookfield viscometer. CFs [15] were synthesized by spinning the polymeric solution on the substrate surface at 4000 rpm for 30 s; this procedure was repeated layer by layer five times. CFs were treated at 340°C for 4 h to remove the organic matter; then CFs were annealed at 500°C, 600°C and 700°C for 32 h in a conventional furnace under an ambient atmosphere.…”
Section: Methodsmentioning
confidence: 99%
“…Based on these facts, to improve the CCTO PL emission and reduce the temperature of thin film deposition, the aim of this study is to obtain CCTO thin films formed by using two different methods: chemical [15] and pressure [16][17][18][19] depositions.…”
Section: Introductionmentioning
confidence: 99%