Electric and dielectric properties of pure and doped CaCu3Ti4O12 perovskite materials

Influence of interface point defect on the dielectric properties of Y doped CaCu3Ti4O12 ceramics

“…[15][16][17] Figure 4 demonstrates the complex impedance for CaCu 3 Ti 4Àx Y x O 12 ceramics measured in the frequency range from 40 Hz to 1 MHz at room temperature. Only one large arc is observed in the complex impedance of the undoped sample.…”

Towards materials with enhanced electro-mechanical response: CaCu3Ti4O12–polydimethylsiloxane composites

“…21 Nowadays, it is widely accepted that the high permittivity value of sintered CCTO ceramics is associated with an internal barrier layer capacitance (IBLC) structure. [23][24][25] In this model, the conductivity of a sample is prevented from percolating by the presence of insulating blocking layers at the surfaces or at internal domain boundaries. Thus, the behaviour of CCTO can be explained in terms of semiconducting grains surrounded by insulating grain boundaries, which make it to be considered as a very promising high dielectric constant filler for applications in microelectronic, mainly in capacitive applications.…”

Electrical properties and Mössbauer spectra of rutile-type Fex/2Ta(Nb)x/2Ti1-xO2 (x = 0.05, 0.1) ceramics

“…3(a), the difference is clearly seen for the bulk of FTT01, prepared in air or reducing atmosphere (measured in air). For preparation in air, σ DC is low with small variations on heating and cooling and shows Arrhenius behaviour characterized by activation energy of E A ≅ 1.07 eV and low σ DC (500 K) ≅ 2×10 −8 Ω −1 cm −1 such high E A for the bulk is in general observed for ionic conduction, but it also was measured for hole conduction on SrTiO 3 ; on the other hand, electronic E A values of similar size were deduced for GB processes in CCTO ceramics with E A ≅ 0.8 eV [36,37]. In order for GB/SE conduction processes to measure, frequencies<20 Hz would have been necessary, outside the available frequency range.…”