2008
DOI: 10.1143/jpsj.77.084705
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Electric and Magnetic Response of Multi-Wall Carbon Nanotubes

Abstract: The distribution of induced electric field around a carbon nanotube is calculated in an external field applied perpendicular to the axis. In multi-wall nanotubes, the field is screened out almost completely by a few outer walls. The field distribution is calculated also for a magnetic field, showing that NMR line is broadened roughly in proportion to the wall number in multi-wall nanotubes.

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Cited by 21 publications
(21 citation statements)
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“…The susceptibility of the carbon nanotube in a field perpendicular to the axis is obtained by replacing q with 2=L with tube circumference L. 31,33) As a function of " F at fixed q, it is nonzero only in a finite region satisfying j" F j < q=2 and its integral over " F becomes constant, and in the limit of q ! 0 it goes to…”
Section: Preliminarymentioning
confidence: 99%
See 1 more Smart Citation
“…The susceptibility of the carbon nanotube in a field perpendicular to the axis is obtained by replacing q with 2=L with tube circumference L. 31,33) As a function of " F at fixed q, it is nonzero only in a finite region satisfying j" F j < q=2 and its integral over " F becomes constant, and in the limit of q ! 0 it goes to…”
Section: Preliminarymentioning
confidence: 99%
“…[21][22][23][24][25] In this paper we use the self-consistent Born approximation assuming scatterers with potential range smaller than the typical electron wavelength (but larger than the lattice constant) in contrast to recent extensions to more general scatterers. 26,27) It should be mentioned that the orbital magnetism in uniform field was also studied for related materials, such as graphite intercalation compounds, [28][29][30] carbon nanotube, 11,[31][32][33] graphene ribbons, 34) few-layer graphenes, 3,19,35) bulk graphite, 36) bismuth, [37][38][39] and organic compounds having Dirac-like spectrum. 40) The paper is organized as follows: In x2, following a brief review on the electronic states, the diamagnetic susceptibility in ideal graphene, and a self-consistent Born approximation, we shall obtain an explicit expression for the susceptibility in the presence of disorder.…”
Section: Introductionmentioning
confidence: 99%
“…37) From a theoretical point of view, the singular behavior in ideal graphene is better understood by taking the limit of vanishing gap. Further, the orbital magnetism was studied for various narrow-gap materials, such as graphite intercalation compounds, [38][39][40] carbon nanotube, 5,[41][42][43] graphene ribbons, 44) few-layer graphenes, [45][46][47] bulk graphite, 48) bismuth, [49][50][51] and organic compounds having Dirac-like spectrum.…”
Section: Introductionmentioning
confidence: 99%
“…(22) is equivalent to the equation for static fields in Ref. 64 and we have extended it to the dynamic regime, here. A naive derivation of Eq.…”
Section: Formulationmentioning
confidence: 99%