Electric and Photoelectric Properties of 3,4–Ethylenedioxythiophene‐Functionalized n‐Si/PEDOT:PSS Junctions

Abstract

PSS interface from the n-Si surfaces.

UV-Initiated Si–S, Si–Se, and Si–Te Bond Formation on Si(111): Coverage, Mechanism, and Electronics

“…The effect of surface functionalization was examined for the series, Si–S–Ph, Si–Se–Ph, and Si–Te–Ph, since these groups contain the same consistent phenyl termination. Functionalization of the silicon surface can alter its electronics, resulting from band bending due to charged surface states and surface dipoles, ,, and thus we wished to examine the effect of the series of chalcogenide linkers on the properties of the silicon, since earlier predictions had suggested large effects. − XPS can be used to determine the band bending, and work function can be obtained from UPS measurements. ,,, Measurements required multiple samples to account for measurement variability, as well as the use of gold-on-silicon as the reference for XPS, as outlined by Lewis and co-workers Figure S6a,b shows the XPS spectra and cross-sectional SEM image of the Au reference used for binding energy calibration.…”

“…The effect of surface functionalization was examined for the series, Si−S− Ph, Si−Se−Ph, and Si−Te−Ph, since these groups contain the same consistent phenyl termination. Functionalization of the silicon surface can alter its electronics, resulting from band bending due to charged surface states and surface dipoles, 4,83,84 and thus we wished to examine the effect of the series of chalcogenide linkers on the properties of the silicon, since earlier predictions had suggested large effects. 21−23 XPS can be used to determine the band bending, and work function can be obtained from UPS measurements.…”

A Mechanistic Study of the Oxidative Reaction of Hydrogen-Terminated Si(111) Surfaces with Liquid Methanol

“…[1][2] The reactivity of hydrogen-terminated Si(111) (H-Si(111)) surfaces toward organic nucleophiles, including alkenes, [3][4] alkynes, [5][6] amines, [7][8][9][10][11] thiols and disulfides, [12][13] Grignards, [14][15] and alcohols, [16][17][18][19][20][21][22][23][24][25] has been widely exploited to impart desirable functionality to the Si interface. These surface reactions have been used to control the interface between Si and metals, [26][27][28][29][30][31] metal oxides, [32][33][34][35] polymers, [36][37][38][39][40][41] and redox assemblies.…”

“…The device properties of Si can be manipulated through control over the structure and chemical composition of crystalline Si surfaces. , The reactivity of hydrogen-terminated Si(111) (H–Si(111)) surfaces toward organic nucleophiles, including alkenes, , alkynes, , amines, − thiols and disulfides, , Grignards, , and alcohols, − has been widely exploited to impart desirable functionality to the Si interface. These surface reactions have been used to control the interface between Si and metals, − metal oxides, − polymers, − and redox assemblies. − …”

Control of the Band-Edge Positions of Crystalline Si(111) by Surface Functionalization with 3,4,5-Trifluorophenylacetylenyl Moieties

“…1 Modern semiconductor devices rely heavily on p-n homojunctions to form a voltageproducing junction that is independent of the energetics of the interfacing phase, which can include metals, 2-3 metal oxides, [4][5][6][7][8] catalysts, [9][10] conductive polymers, [11][12][13][14] and electrolytes. [15][16][17] Many semiconductors cannot, however, be doped to form high-quality p-n homojunctions, and moreover the diffusive doping processes used to fabricate emitter layers is generally not compatible with small-grain-size polycrystalline thin-film semiconducting base layers.…”