Electric and thermo spin transfer torques in Fe/Vacuum/Fe tunnel junction

Jia, Xingtao; Xia, Ke

doi:10.1007/s11467-013-0375-z

Cited by 9 publications

(4 citation statements)

References 33 publications

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“…Although a up-limit of ZT 5 is found in a DBMTJ with 7 L MgO barrier as list in table 2, the real ZT is relatively small for the huge phonon thermal conductance. One simple way to restrain k p is introducing a vacuum barrier [33]. Substituting one MgO barrier by vacuum in the DBMTJ, the up-limit of ZT would be achieved by blocking phonon thermal constance.…”

Section: Asymmetric Fe | Mgo | Fe | Vac | Fe Dbmtjsmentioning

confidence: 99%

Seeking large thermoelectric effects in MgO-based tunnel junctions

2016

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There is much controversy concerning thermoelectric effects in the MgO-based magnetic tunnel junctions (MTJs) as reported in some recent publications. To clarify the problem, we give calculations from atomic first-principles systemically. Large Seebeck coefficient (S) and up-limit of figure of merit (ZT) are predicted in double-and multi-barrier MTJs, with those in single-barrier MTJs being relatively small. By restraining the phonon thermal conductance through the introduction of one vacuum barrier or numbers of MgO barriers, the up-limit of ZT can be obtained. Room temperature m » --S 220 VK 1 and ZT » 3.5 are predicted in an asymmetric Fe | MgO | Fe | Vaccum | Fe MTJs. The resonant quantum-well states are suggested to be responsible for the enhanced thermoelectric effects in the MTJs with double-and multi-barrier.

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Section: Asymmetric Fe | Mgo | Fe | Vac | Fe Dbmtjsmentioning

confidence: 99%

Seeking large thermoelectric effects in MgO-based tunnel junctions

2016

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“…Especially, it is found that the ZGNR/h-BN/ZGNR MTJ possesses simillar features with prototypical Fe/MgO/Fe [27], but has an advantage with higher TMR ratio and could be fabricated at the atomic scale. Particularly, Jia and Xia [28] replaced the insulator part of Fe/MgO/Fe MJT by a vacuum barrier, then presented first-principle calculations of electric and thermo spin transfer torques in such Fe/Vacuum/Fe magnetic tunnel junction, observing remarkable thermoelectric effects. Inspired by the above context, a question arises naturally: what would happen if the the vacuum barrier is introduced to replace the h-BN part in the previous ZGNR/ h-BN/ZGNR MTJ?…”

Section: Introductionmentioning

confidence: 99%

Vacuum barrier induced large spin polarization, giant magnetoresistance, and pure spin photocurrent in ferromagnetic zigzag graphene nanoribbons

Song¹,

Liu²,

Wei³

et al. 2022

J. Phys. D: Appl. Phys.

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Based on ﬁrst-principle calculations combined with non-equilibrium Green’s function method, we investigate the spin-polarized transport properties of a two-probe device which consists of a vacuum barrier sandwiched between two semi-inﬁnite ferromagnetic zigzag graphene nanoribbons (ZGNRs). It is well known that any vacuum barrier itself is not spin-polarized, and meanwhile, the inﬁnite pristine ferromagnetic ZGNR presents no spin polarization in the transmission function around the Fermi level. However, our computational results indicate that robust large spin polarization is found in the proposed device. More interestingly, giant magnetoresistance up to 3.0 × 108% can be obtained at low bias voltage. Furthermore, the photogalvanic eﬀect (PGE)-induced fully spin-polarized photocurrent or pure spin photocurrent can be generated in such device by illumination with polarized light, depending on the symmetry of structure. Consequently, our results indicate that vacuum barrier may show interesting spin-polarized transport properties in certain systems and should be taken into consideration in the construction of molecular junctions and spintronic devices.

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“…[1,2] Subsequently, the emergence of magnetic tunnel junctions (MTJs) prominently promoted the revolution of various spintronics. [3][4][5][6][7][8][9] Compared with traditional electronic devices, the magnetic recording density of MTJsbased devices can be considerably enhanced, leading to the miniaturization of electronic devices. So far, although much progress has been made, many problems and challenges still exist and need to be resolved for improvement of efficiency, performance, and stability of MTJs.…”

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confidence: 99%

Spin Transport Properties of MnBi₂Te₄-Based Magnetic Tunnel Junctions

Dong

Jia

Yan

et al. 2023

Chinese Phys. Lett.

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The van der Waals heterojunctions, stacking of different two-dimensional materials, have opened unprecedented opportunities to explore new physics and device concepts. Here, combining density functional theory with non-equilibrium Green's function technique, we systematically investigate the spin-polarized transport properties of van der Waals magnetic tunnel junctions, Cu/MnBi2Te4/MnBi2Te4/Cu and Cu/MnBi2Te4/h-BN/n·MnBi2Te4/Cu(n = 1, 2, 3). We find that the maximum TMR of Cu/MnBi2Te4/h-BN/3·MnBi2Te4/Cu MTJ can reach 162.6%, exceeding the system with only a single layer MnBi2Te4. More interestingly, our results indicate that Cu/MnBi2Te4/h-BN/n· MnBi2Te4/Cu (n = 2, 3) MTJs can realize the switching function, while Cu/MnBi2Te4/h-BN/3· MnBi2Te4/Cu MTJ exhibits the negative differential resistance. The Cu/MnBi2Te4/h-BN/3·MnBi2Te4/Cu in the parallel state shows a spin injection efficiency of more than 83.3%. Our theoretical findings of the transport properties will shed light on the possible experimental studies of MnBi2Te4-based van der Waals magnetic tunneling junctions.

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Electric and thermo spin transfer torques in Fe/Vacuum/Fe tunnel junction

Cited by 9 publications

References 33 publications

Seeking large thermoelectric effects in MgO-based tunnel junctions

Seeking large thermoelectric effects in MgO-based tunnel junctions

Vacuum barrier induced large spin polarization, giant magnetoresistance, and pure spin photocurrent in ferromagnetic zigzag graphene nanoribbons

Spin Transport Properties of MnBi₂Te₄-Based Magnetic Tunnel Junctions

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Electric and thermo spin transfer torques in Fe/Vacuum/Fe tunnel junction

Cited by 9 publications

References 33 publications

Seeking large thermoelectric effects in MgO-based tunnel junctions

Seeking large thermoelectric effects in MgO-based tunnel junctions

Vacuum barrier induced large spin polarization, giant magnetoresistance, and pure spin photocurrent in ferromagnetic zigzag graphene nanoribbons

Spin Transport Properties of MnBi2Te4-Based Magnetic Tunnel Junctions

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Spin Transport Properties of MnBi₂Te₄-Based Magnetic Tunnel Junctions