Electric‐Field Control of Dirac Two‐Dimensional Electron Gas in PbTe/CdTe Heterostructures

Zhang, Le; Shu, Tianyu; Wu, Huizhen; Ye, Zhizhen; Zhu, Lingjun

doi:10.1002/pssr.201800551

Cited by 3 publications

(2 citation statements)

References 26 publications

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“…The CdTe/PbTe heterojunction system, consisting of zincblende CdTe and rocksalt PbTe, was recently found to exhibit a two-dimensional electron gas (2DEG) at the (111) polar interface with exceptional carrier density and mobility. The 2DEG is attributed to the interfacial bonding coordination mismatch, which is different from traditional 2DEG systems [ 8 , 9 , 10 , 11 ]. The authors [ 12 , 13 ] showed that such a system was a good candidate for high-speed mid-infrared detectors.…”

Section: Introductionmentioning

confidence: 99%

Effect of Manganese Alloying on Infrared Detectors Made of Pb1−xMnxTe/CdTe Multilayer Composite

et al. 2023

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The properties of Pb1−xMnxTe/CdTe multilayer composite grown by molecular beam epitaxy on a GaAs substrate were studied. The study included morphological characterization by X-ray diffraction, scanning electron microscopy, secondary ion mass spectroscopy, as well as electron transport and optical spectroscopy measurements. The main focus of the study was on the sensing properties of photoresistors made of Pb1−xMnxTe/CdTe in the infrared spectral region. It was shown that the presence of Mn in the Pb1−xMnxTe conductive layers shifted the cut-off wavelength toward blue and weakened the spectral sensitivity of the photoresistors. The first effect was due to an increase in the energy gap of Pb1−xMnxTe with an increase in Mn concentration, and the second was due to a pronounced deterioration in the crystal quality of the multilayers owing to the presence of Mn atoms, as shown by the morphological analysis.

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Section: Introductionmentioning

confidence: 99%

Effect of Manganese Alloying on Infrared Detectors Made of Pb1−xMnxTe/CdTe Multilayer Composite

et al. 2023

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“…Many researchers have investigated the mechanism of conduction between the insulating non-polar STO and different polar layers, like LaTiO 3 /STO, PrAlO 3 /STO, NdAlO 3 /STO, GdTiO 3 /STO, and LaGaO 3 /STO [15][16][17][18][19], and nonpolar/nonpolar interfaces [20,21]. Besides, the interfacial transport properties of complex oxides have been modified by different methods, such as modulation doping, gating field, polar adsorbate, and light [22][23][24][25]. Although the response of LaAlO 3 /SrTiO 3 (LAO/STO) to light was investigated many years ago, more recently, the effect of light illumination on the transport properties for different interfaces has revealed the potential applications of these interfaces in electronics and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Controlling transport properties at LaFeO₃/SrTiO₃ interfaces by defect engineering

Butt¹,

Zeeshan²,

Zhao³

et al. 2021

J. Phys.: Condens. Matter

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The formation of conductive LaFeO3/SrTiO3 interfaces is first time reported by pulsed laser deposition via controlling the defects of SrTiO3, which are closely related to the surface of substrate. It is found that the interfaces grown on SrTiO3 substrates without terraces exhibit the two dimensional electron gas. Moreover, the conductive interfaces show a resistance upturn at low temperatures which is strongly diminished by light irradiation. These interfaces favor the persistent photoconductivity, and the enormous value of relative change in resistance, about 60 185.8%, is also obtained at 20 K. The experimental results provide fundamental insights into controlling the defects at conductive interfaces of oxides and paving a way for complex-oxides based optoelectronic devices.

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Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas

Ma¹,

Shu²,

Zhu³

et al. 2019

Acta Phys. Sin.

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Semiconductor heterojunctions play a crucial role in exploring novel physics and developing advanced devices. Due to the characteristic electronic band structure, such as the narrow bandgap and the large spin-orbital interaction, the Ⅳ-Ⅵ compound semiconductor heterojunctions are not only of great importance to infrared detectors, but also arouse extensively concern in the frontier fields of physics, like topological insulators (TIs) and spintronics. Most excitingly, the two-dimensional electron gas (2DGE) with high electron density and high mobility is revealed at the interface of the typical Ⅳ-Ⅵ compound semiconductor CdTe/PbTe heterojunction, the formation of which is attributed to the unique twisted interface of the Ⅳ-Ⅵ compound semiconductor heterojunctions. Further researches demonstrate that the 2DEG system boasts prominent infrared photoresponse and is of Dirac fermion nature. This review presents the major progress in Ⅳ-Ⅵ compound semiconductor heterojunction 2DEG in the past decades. First, the formation mechanism of the twisted heterojunction 2DEG is discussed based on both theoretical and experimental results. By molecular beam epitaxy the novel lattice-mismatch heterostructure CdTe/PbTe with sharp interface was obtained and first-principle calculations revealed that the alternately changed atomic layer spacing played a crucial role in the formation of 2DEG. High resolution transmission electron microscope image of the interface clearly demonstrated the twisted interfacial structure and showed that the interfacial Te-sharing bonding configuration provided the excessive electrons. Second, we show the transport properties of the 2DEG under the condition of low temperature and high magnetic field, and the unambiguous π Berry phase of quantum oscillations indicate that the 2DEG is of Dirac fermion nature and demonstrate its potential for realizing two-dimensional TI and spintronic device. Moreover, the 2DEG exhibits quite high mobility, making it candidate for high electron mobility transistor. At last, the high-performance mid-infrared photodetector is displayed, which is built based on the typical Ⅳ-Ⅵ compound semiconductor CdTe/PbTe heterojunction. The most exciting feature of the detector is that it is able to achieve high-speed response with satisfying detectivity while working at room temperature, which could be a complementation to state-of-art mid-infrared photodetectors. In summary, the Ⅳ-Ⅵ compound semiconductor heterojunctions are of great significance not only in fundamental physics but also in device applications, and this review could provide the researchers with the main results in the field.

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Electric‐Field Control of Dirac Two‐Dimensional Electron Gas in PbTe/CdTe Heterostructures

Cited by 3 publications

References 26 publications

Effect of Manganese Alloying on Infrared Detectors Made of Pb1−xMnxTe/CdTe Multilayer Composite

Effect of Manganese Alloying on Infrared Detectors Made of Pb1−xMnxTe/CdTe Multilayer Composite

Controlling transport properties at LaFeO₃/SrTiO₃ interfaces by defect engineering

Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas

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Electric‐Field Control of Dirac Two‐Dimensional Electron Gas in PbTe/CdTe Heterostructures

Cited by 3 publications

References 26 publications

Effect of Manganese Alloying on Infrared Detectors Made of Pb1−xMnxTe/CdTe Multilayer Composite

Effect of Manganese Alloying on Infrared Detectors Made of Pb1−xMnxTe/CdTe Multilayer Composite

Controlling transport properties at LaFeO3/SrTiO3 interfaces by defect engineering

Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas

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Controlling transport properties at LaFeO₃/SrTiO₃ interfaces by defect engineering