Electric‐Field‐Controlled Dopant Distribution in Organic Semiconductors

Müller, Lars; Rhim, Seon‐Young; Sivanesan, Vipilan; Wang, Dongxiang; Hietzschold, Sebastian; Reiser, Patrick; Mankel, Eric; Beck, Sebastian; Barlow, Stephen; Marder, Seth R.; Pucci, Annemarie; Kowalsky, Wolfgang; Lovrinčić, Robert

doi:10.1002/adma.201701466

Cited by 35 publications

(52 citation statements)

References 34 publications

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“…[ 38 ] We also note that in previous measurements of P3HT/F4TCNQ samples, when a high potential is applied, the F4TCNQ − ions drift in the electric field and therefore move during a conductivity measurement. [ 39 ] The electric field applied here is far lower. We have no evidence that the distribution of F4TCNQ − ions changed during our measurements.…”

Section: Resultsmentioning

confidence: 99%

Reversible Doping and Photo Patterning of Polymer Nanowires

Bedolla-Valdez

Xiao

Cendra

et al. 2020

Adv Elect Materials

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waveguides, light couplers, lasing media, photonic crystals, spectral filters, reflectors, and sensing devices [1] as well as printed electronic devices like thin-film transistors (TFTs), organic inverters, ring oscillators, logic gates, organic photovoltaics (OPVs), organic light emitting diodes (OLEDs) for displays, OLED lighting, electronics components, and integrated smart systems. [1-5] Unfortunately, the application of argument (1) "infinite chemical tailorability" makes argument (2) "low-cost solution coating" much more challenging because each new material has to be reoptimized for coating or re-synthesized for photo cross-linking and many materials are just difficult or impossible to reproducibly synthesize and process. The optoelectronic material properties of OSC materials are sufficient for industrial products, but there is no universally applicable approach or method for depositing, patterning, and doping OSC materials that serves the equivalent functions that photolithography does for silicon technology. For Si, a simple photolithography processing step defines a pattern on the substrate with diffraction limited resolution. We note that multi-step photolithography, e-beam, and other processes can produce significantly smaller features. Regardless of the photomask resolution, the mask enables selective area implantation of dopants into the Si, deposition of another material onto the Si, or etching the Si. Photolithography enables non-contact selective area patterning, etching, and doping with diffraction limited lateral resolution in Si. After Si processing, the lithographic mask is etched away without damaging the Si. Except in very limited cases, photolithography is not compatible with OSC processing because OSCs are damaged by removal of the mask and the other chemical processing steps. There is no fast and easy photopatterning method for OSCs that serves the same functions that photolithography serves for Si technology. The absence of an equivalent photoprocessing method with sub-micron resolution for OSC materials greatly limits the use of OSC materials in devices. We present here a photoprocessing method that enables non-contact selected area patterning, etching, and doping of the organic semiconductor poly-3-hexylthiophene (P3HT) with diffraction limited lateral resolution. Diffraction limited resolution with a 405 nm laser yields well-defined lateral features as small as 300 nm. [6] Compared to solution-coating methods, for Recent development of dopant induced solubility control (DISC) patterning of polymer semiconductors has enabled direct-write optical patterning of poly-3-hexylthiophene (P3HT) with diffraction limited resolution. Here, the optical DISC patterning technique to the most simple circuit element, a wire, is applied. Optical patterning of P3HT and P3HT doped with the molecular dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) wires with dimensions of 20-70 nm thickness, 200-900 nm width, and 40 μm length is demonstrated. In addition, optical patterning of wire...

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Section: Resultsmentioning

confidence: 99%

Reversible Doping and Photo Patterning of Polymer Nanowires

Bedolla-Valdez

Xiao

Cendra

et al. 2020

Adv Elect Materials

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“…In this case, g m exhibited a near‐ideal ascent stage that g m dramatically increased with V G from 5 V and then saturated at V G of ≈−10 V. It has been reported that some molecular dopants such as F4‐TCNQ tended to migrate in organic films under the electric field force. The migration of dopant molecules into the active channel under the electric field force may also give rise to the performance improvement . To eliminate this possibility, the con‐doped devices with channel length of 200 µm was characterized for comparison, since the drift of molecular dopants is known to take place only within a length scale of micrometers under the electric field force .…”

Section: Resultsmentioning

confidence: 99%

Air Effect on the Ideality of p‐Type Organic Field‐Effect Transistors: A Double‐Edged Sword

Jia

Jie

et al. 2019

Adv Funct Materials

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Organic field-effect transistors (OFETs) often deviate from ideal behaviors in air, which masks their intrinsic properties and thus significantly impedes their practical applications. A key issue of how the presence of air affects the ideality of OFETs has not yet been fully understood. It is revealed that air atmosphere may exert a double-edged sword effect on the active semiconductor layer when determining the ideality of OFETs fabricated from p-type crystalline organic semiconductors. Upon exposing the as-fabricated device to air, water and oxygen mainly function as efficient p-type dopants for the active layer in the contact regions, enhancing charge carrier injection and consequently improving device ideality. Nevertheless, as the exposure time increases, the trapping centers for the injected minority charge carriers appear in the channel region, leading to degradation of device ideality. Inspired by the double-edged sword behavior of air, a near-ideal OFET is achieved by ingeniously utilizing the doping/positive effect and eliminating the trapping/negative effect. The effect of air on the ideality of p-type OFETs is clarified, which not only illuminates some common observations of OFETs in air but also offers useful guidance for the construction of high-performance ideal OFETs.

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“…a School of Biological and Chemical Sciences, Queen Mary University of London, solid state, in particular at elevated temperatures, and drift due to applied electric fields, potentially reducing device lifetimes. 16,17 Recently, molecular engineering of semiconductors and dopants has been employed as a tool to control dopant diffusion and polymer:dopant interactions. One well-explored strategy is to introduce ethylene glycol motifs into the polymer side chain.…”

Section: Introductionmentioning

confidence: 99%