Electric field effect in a GaAs/AlAs spherical quantum dot

Dane, C.; Akbaş, Halide; Minez, S.; Guleroglu, A.

doi:10.1016/j.physe.2008.07.016

Cited by 59 publications

(11 citation statements)

References 24 publications

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“…The study of the impurity states in semiconductor nanostructures was initiated only in early 1980s through the pioneering work of Bastard [5]. In spite of the growing interest to the topic of impurity doping in nanocrystallites, the majority of theoretical works have been carried out on shallow donors in spherical QDs employing perturbation methods [6][7][8][9][10] or variational approaches [11][12][13][14][15][16]. For example, using the perturbation methods, Bose et al [6][7][8][9] obtained the binding energy of a shallow hydrogenic impurity in spherical QDs.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of GaAs/Al_{x}Ga_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field

Holovatsky¹,

Yakhnevych²,

Voіtseкhіvsкa³

2018

Condens. Matter Phys.

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The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/Al x Ga 1−x As/GaAs is researched. The problem is solved in the framework of the effective mass approximation and rectangular potential wells and barriers model using the method of wave function expansion over a complete set of electron wave functions in nanostructure without electric field. It is shown that under the effect of electric field, the electron in the ground state tunnels from the inner potential well into the outer one. It also influences on the oscillator strengths of intraband quantum transition. The binding energy of an electron with ion impurity is obtained as a function of electric field intensity at a different location of impurity.

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Section: Introductionmentioning

confidence: 99%

Optical properties of GaAs/Al_{x}Ga_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field

Holovatsky¹,

Yakhnevych²,

Voіtseкhіvsкa³

2018

Condens. Matter Phys.

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“…External perturbations, such as application of electric field highlight important aspects of confined impurities [26][27][28][29][30][31][32][33][34][35][36][37][38][39]. The interplay between impurity and the applied field affects the optical properties and turns out to be important in view of fundamental physics and device applications.…”

Section: Introductionmentioning

confidence: 99%

Noise-driven optical absorption coefficients of impurity doped quantum dots

Ganguly¹,

Saha

Pal³

et al. 2016

Physica E: Low-dimensional Systems and Nanostructures

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“…External perturbations, such as application of electric field, have been found to provide valuable information about confined impurities [29][30][31][32][33][34][35][36][37][38][39][40][41]. The interplay between impurity and the applied field modulates the optical properties and has drawn attention in view of fundamental physics and device applications.…”

Section: Introductionmentioning

confidence: 99%