Proceedings of 2011 International Conference on Electronics and Optoelectronics 2011
DOI: 10.1109/iceoe.2011.6013226
|View full text |Cite
|
Sign up to set email alerts
|

Electric field effect on binding energies of impurity states in II–VI and III–V quantum wires of polar semiconductors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

2013
2013
2013
2013

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 16 publications
0
1
0
Order By: Relevance
“…[5,6] The numerical calculations for several II-VI and III-V polar semiconductors have been performed for obtaining the binding energies, and the polaron effects on the binding energies of the donor impurity states in an external electric field have been analyzed in Refs. [7,8]. Further, a few interacting potentials between the charges and the optical phonon have been employed in explaining the binding energies.…”
mentioning
confidence: 99%
“…[5,6] The numerical calculations for several II-VI and III-V polar semiconductors have been performed for obtaining the binding energies, and the polaron effects on the binding energies of the donor impurity states in an external electric field have been analyzed in Refs. [7,8]. Further, a few interacting potentials between the charges and the optical phonon have been employed in explaining the binding energies.…”
mentioning
confidence: 99%