Electric field effects in ultrathin β-ZrNBr nano-crystals

Abstract

Layered materials with a non-zero band gap have emerged in the past few years because of their potential to supersede graphene in nano-electronics. Zirconium nitrogen halides (ZrNX, X ¼ Cl,Br) are indirect gap semiconductors with a layered crystal structure. Here, we report the realization of electric field effects in exfoliated nano-crystals of b-ZrNBr using degenerately doped silicon as a back-gate. The as-produced devices demonstrate n-type transport with field effect carrier mobility of 5.8 cm 2 V À1 s À1 . The conduction is dominated by variable range hopping for the range of temperature from 295 K to 32 K. Our results present a promising candidate for future thin-film electronics application. V C 2013 AIP Publishing LLC. [http://dx.

Highly-efficient heterojunction solar cells based on 2D Janus transition-metal nitride halide (TNH) monolayers with ultrahigh carrier mobility

“…30 Moreover, layered β-ZrNBr has proven to be a promising candidate for use in field-effect transistors. 31 Additionally, the β-ZrNCl layer is more competitive than other superconductors. 32,33 In summary, significant research has been carried out to develop the family of β-TMNHs.…”