Electric field effects in ZnSe/BeTe superlattices

Wagner, Veit; Becker, M.; Weber, Manuel; Korn, Maria Graças A.; Keim, M.; Waag, A.; Geurts, J.

doi:10.1016/s0169-4332(00)00427-x

Cited by 6 publications

(2 citation statements)

References 2 publications

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“…Subsequently, a sequence of ER spectra was taken while varying the dc offset voltage U ext from --4 to +1 V. The resulting reflectance modulation, shown in the upper part of Fig. 4, behaves similar to the modulation spectra in the insert of tive analysis, a fit of the lowest transition with a lorentzian oscillator model describing all spectra consistently is applied, which is described in detail elsewhere [20]. The ER structures at higher energies in Fig.…”

Section: Electronic Structure Of Znse/bete Superlatticesmentioning

confidence: 83%

Raman and Modulation Spectroscopy at II-VI Semiconductor Interfaces

Wagner

Geurts

2001

phys. stat. sol. (a)

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Dedicated to Professor Dr. Wolfgang Richter on the occasion of his 60th birthdayThe structural and electronic properties of semiconductor interfaces crucially influence the behaviour of modern nanoscale heterostructures. We apply optical spectroscopy (Raman spectroscopy and electroreflectance (ER)) with special reference to the interface-induced vibronic signature and electronic interband transitions in wide-band gap II-VI materials. This material system allows the combination of materials with extremely different vibronic and electronic properties, which have to be matched at the interfaces. As examples we present the analysis of ZnSe/BeTe superlattices (SL) and CdSe monolayers, embedded between BeTe barriers, grown on GaAs(100) substrates. Both systems exhibit type II electronic band alignment with a rather high valence band offset of about 1 eV and an electron confinement potential in the range of 2 eV. Since these II-VI compounds contain no common elements, two types of interface bond configurations are possible: either Be-Se or Zn-Te (Cd-Te). We show that the properties of the type-II spatially indirect transition are completely governed by this interface layer. The normal and inverted electronic interface signature can be addressed individually in ER by applying an external dc electric field or by using polarised light with polarisation either along the [110] or [ 1 110] direction. In addition the chemical nature of the interface is analysed, using its phonon properties in Raman spectroscopy: They are completely altered for different interface bonding conditions in the case of embedded monolayers. Moreover, the ER results from the epilayers are also used for the deduction of the band offset at the interface substrate-epilayer and Schottky barrier of the outer interfaces (epilayer-metal).

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Section: Electronic Structure Of Znse/bete Superlatticesmentioning

confidence: 83%

Raman and Modulation Spectroscopy at II-VI Semiconductor Interfaces

Wagner

Geurts

2001

phys. stat. sol. (a)

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“…Refs. . These typical SL Raman features will not be in the focus of this article, because excellent extended reviews for this subject are available .…”

Section: Introductionmentioning

confidence: 99%

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

Geurts

2014

Phys. Status Solidi B

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This review focuses on the analysis of buried semiconductor interfaces by Raman spectroscopy, i.e. inelastic light scattering. Simultaneous access to structural and electronic properties can be obtained by employing phonon Raman scattering, induced by deformation potential, or alternatively by the electric-field induced Fröhlich mechanism, as well as Raman scattering from coupled plasmon-LO-phonon modes. Structural information may comprise intermixing, reactivity, strain and interfacial atomic bond sequences. The main electronic properties derived from Raman spectroscopy are the doping levels of the constituent layers, the interfacial electric field strengths and the free-carrier depletion layer widths. Attention is paid also to the possibility of in situ growth monitoring by Raman spectroscopy. Examples of semiconductor interface analysis are presented for heterovalent interfaces between II-VI and III-V semiconductors, especially ZnSe/GaAs(001) and CdTe/ InSb(001), as well as for heavily strained CdTe monolayers, embedded in a BeTe epilayer on GaAs(001).

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Beryllium Chalcogenides: Interface Properties and Potential for Optoelectronic Applications

Wagner

Geurts

Waag

Advances in Solid State Physics

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Electric field effects in ZnSe/BeTe superlattices

Cited by 6 publications

References 2 publications

Raman and Modulation Spectroscopy at II-VI Semiconductor Interfaces

Raman and Modulation Spectroscopy at II-VI Semiconductor Interfaces

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties

Beryllium Chalcogenides: Interface Properties and Potential for Optoelectronic Applications

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