Electric field induced charge density variations in partially-ionic compounds

Pietsch, U.; Stahn, J.; Davaasambuu, Jav; Pucher, A.

doi:10.1016/s0022-3697(01)00169-x

Cited by 11 publications

(5 citation statements)

References 10 publications

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“…Meanwhile, one knows that the Si-O bond in α-SiO 2 is not purely ionic, it also contains covalent contributions [2,3]. Pietsch et al [4] have suggested a model of the inverse piezoelectric effect, which considers the covalent bond. Here, the appearance of the inverse piezoelectric effect is explained by the rotation of rigid SiO 4 -tetrahedra.…”

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confidence: 99%

“…As for the other measured reflections we observed an almost linear variation with electric field only up to ±6 kV/mm (and not up to ±8 kV/mm). For the interpretation of data we used the model of rotating tetrahedra, introduced in [4], but considering a larger number of measured Bragg reflections compared to the previous study. High-resolution X-ray structure analysis has revealed that the Si-O bond in α-SiO 2 is partially covalent.…”

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confidence: 99%

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Atomistic origin of the inverse piezoelectric effect in α-SiO ₂ and α-GaPO ₄

Davaasambuu¹,

Pucher²,

Kochin³

et al. 2003

Europhys. Lett.

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In order to understand the atomistic origin of the inverse piezoelectric effect, the changes of integrated intensities of selected Bragg reflection of α-SiO2 and α-GaPO4 were studied, which were induced by an external high electric field of up to E = ±8 kV/mm. Because the model of the field-induced displacement of ionic sublattices against each other fails for the interpretation of experimental data, we propose a model of the inverse piezoelectric effect, which considers the strong covalent bond between Si and O atoms in α-SiO2. Here the main effect of screening the external electric field is a change in the Si-O-Si bonding angles, i.e. the rotations of rigid SiO4 tetrahedra. The same model holds for α-GaPO4, which is an isostructural compound to α-SiO2. For the first time a similar experiment was performed at low temperatures. Between 50 K ⩽ T⩽300 K the piezoelectric coefficient d111 of both substances behaves nearly temperature independent. On the other hand, the field-induced change of the intensities increases for decreasing temperature. This can be interpreted by the rotation of tetrahedra, which is partially originated by the temperature decrease and by the external electric field, respectively, accompanied by a field-induced deformation of tetrahedra.

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Atomistic origin of the inverse piezoelectric effect in α-SiO ₂ and α-GaPO ₄

Davaasambuu¹,

Pucher²,

Kochin³

et al. 2003

Europhys. Lett.

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“…detector geometry (4) In our set-up, the resolution of the detector [first part of the right hand side of (4)] corresponds to a momentum resolution of 0.545 a.u. [Gaussian full width at half maximum (fwhm)] while the resolution arising from the angular divergence [second part of (4)] comes to about 0.079 a.u.…”

Section: Am Compton Spectrometer and Test Datamentioning

confidence: 99%

“…[Gaussian full width at half maximum (fwhm)] while the resolution arising from the angular divergence [second part of (4)] comes to about 0.079 a.u. The angular divergence [∆θ in (4)] was determined by simulating the path of the incident and the scattered photons using Monte Carlo routine. Therefore the overall momentum resolution (∆p z ) of the present spectrometer comes out to be 0.55 a.u.…”

Section: Am Compton Spectrometer and Test Datamentioning

confidence: 99%

Use of a Lowest Intensity ²⁴¹Am Compton Spectrometer for the Measurement of Directional Compton Profiles of ZnSe

Ahuja

Heda

2006

Zeitschrift Für Naturforschung A

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In this paper we report on electron momentum densities in ZnSe using Compton scattering technique. For the directional measurements we have employed a newly developed 100 mCi 241 Am Compton spectrometer which is based on a small disc source with shortest geometry. For the theoretical calculations we have employed a self-consistent Hartree-Fock linear combination of atomic orbitals (HF-LCAO) approach. It is seen that the anisotropy in the measured Compton profiles is well reproduced by our HF-LCAO calculation and the other available pseudopotential data. The anisotropy in the Compton profiles is explained in terms of energy bands and bond length. -PACS numbers: 13.60. Fz, 78.70. Ck,

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“…1,2) The actual relationship between a lattice strain and atomic displacements induced by the application of an electric field should be revealed by X-ray diffraction (XRD) structural analysis under an electric field. [3][4][5][6][7][8][9][10] However, atomic displacements induced by inverse piezoelectric effects are usually very small to detect by conventional XRD measurements.…”

Section: Introductionmentioning

confidence: 99%

Time-resolved structure analysis of piezoelectric crystals by X-ray diffraction under alternating electric field

Aoyagi

Osawa

Sugimoto

et al. 2018

Jpn. J. Appl. Phys.

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Rare-earth substitution effects on atomic motions in resonantly vibrating piezoelectric oscillators of langasite-type crystals, namely, La3Ga5SiO14 (LGS) and Nd3Ga5SiO14 (NGS), are revealed by time-resolved X-ray crystal structure analysis under alternating electric fields. Deformations of Ga–O–Ga and Ga–O–Ga/Si bond angles accompanying deformations of RE–O (RE: La or Nd) bond lengths found in LGS are suppressed in NGS. Alternatively, rigid GaO6 octahedra are deformed in NGS. The decreases in RE–O bond lengths and Ga–O–Ga and Ga–O–Ga/Si bond angles caused by the substitution of La by Nd would make the bond lengths and angles more difficult to deform under electric fields; hence, the piezoelectric constants of NGS are smaller than those of LGS.

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Electric field induced charge density variations in partially-ionic compounds

Cited by 11 publications

References 10 publications

Atomistic origin of the inverse piezoelectric effect in α-SiO ₂ and α-GaPO ₄

Atomistic origin of the inverse piezoelectric effect in α-SiO ₂ and α-GaPO ₄

Use of a Lowest Intensity ²⁴¹Am Compton Spectrometer for the Measurement of Directional Compton Profiles of ZnSe

Time-resolved structure analysis of piezoelectric crystals by X-ray diffraction under alternating electric field

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Electric field induced charge density variations in partially-ionic compounds

Cited by 11 publications

References 10 publications

Atomistic origin of the inverse piezoelectric effect in α-SiO 2 and α-GaPO 4

Atomistic origin of the inverse piezoelectric effect in α-SiO 2 and α-GaPO 4

Use of a Lowest Intensity 241Am Compton Spectrometer for the Measurement of Directional Compton Profiles of ZnSe

Time-resolved structure analysis of piezoelectric crystals by X-ray diffraction under alternating electric field

Contact Info

Product

Resources

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Atomistic origin of the inverse piezoelectric effect in α-SiO ₂ and α-GaPO ₄

Atomistic origin of the inverse piezoelectric effect in α-SiO ₂ and α-GaPO ₄

Use of a Lowest Intensity ²⁴¹Am Compton Spectrometer for the Measurement of Directional Compton Profiles of ZnSe