Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer

Nozaki, Takayuki; Shiota, Yoichi; Miwa, Shinji; Murakami, Shinichi; Bonell, Frédéric; Ishibashi, S.; Kubota, Hiroshi; Yakushiji, Kay; Saruya, Takeshi; Fukushima, Akio; Yuasa, Shinji; Shinjo, Teruya; Suzuki, Y.

doi:10.1038/nphys2298

Cited by 242 publications

(194 citation statements)

References 35 publications

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“…As shown in Figure 6a, we observed clear FMR signals with an anti-Lorentzian structure, indicating a VCMA-induced change in the effective anisotropy field in the measured magnetization configuration. 8 Figure 6b shows the applied magnetic field dependence of the resonant frequency. The resonant condition of the magnetization was fit by the conventional Kittel formula:…”

Section: Highly Efficient Voltage Control T Nozaki Et Almentioning

confidence: 99%

“…The amplitude of the voltage-induced FMR signal is proportional to cosθ M sin 2 θ M , where θ M is the elevation angle of the magnetization from the film plane. 8 This function has a maximum value at θ M = 55°. Near the t Fe, SRT1 , the magnetization can be easily directed along the external magnetic field due to the small effective anisotropy field.…”

Section: Highly Efficient Voltage Control T Nozaki Et Almentioning

confidence: 99%

“…For this purpose, we performed a voltage-induced FMR experiment using a homodyne detection method through the TMR effect (see Methods section and Nozaki et al 8 for details). Here, to excite the FMR dynamics effectively, we used the MTJ with t total = 0.49 nm, which is close to the critical thickness of the SRT (t Fe, SRT1 ) for t Ir = 0.05 nm.…”

Section: Highly Efficient Voltage Control T Nozaki Et Almentioning

confidence: 99%

“…5,6 The achievement of the VCMA effect in MgO-based MTJs 7 and the demonstration of high-speed responses, such as voltage-induced ferromagnetic resonance (FMR) excitation, 8,9 spin-wave excitation 10 and dynamic magnetization switching, [11][12][13][14] have brought great changes to research in this field. Modulations of the Curie temperature, 15 domain wall propagation, 16,17 interfacial Dzyaloshinskii-Moriya interaction 18 and proximity-induced magnetism 19 have also been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

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Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

et al. 2017

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Voltage control of spin enables both a zero standby power and ultralow active power consumption in spintronic devices, such as magnetoresistive random-access memory devices. A practical approach to achieve voltage control is the electrical modulation of the spin-orbit interaction at the interface between 3d-transition-ferromagnetic-metal and dielectric layers in a magnetic tunnel junction (MTJ). However, we need to initiate a new guideline for materials design to improve both the voltage-controlled magnetic anisotropy (VCMA) and perpendicular magnetic anisotropy (PMA). Here we report that atomic-scale doping of iridium in an ultrathin Fe layer is highly effective to improving these properties in Fe/MgO-based MTJs. A large interfacial PMA energy, K i,0 , of up to 3.7 mJ m − 2 was obtained, which was 1.8 times greater than that of the pure Fe/MgO interface. Moreover, iridium doping yielded a huge VCMA coefficient (up to 320 fJ Vm − 1 ) as well as high-speed response. First-principles calculations revealed that Ir atoms dispersed within the Fe layer play a considerable role in enhancing K i,0 and the VCMA coefficient. These results demonstrate the efficacy of heavy-metal doping in ferromagnetic layers as an advanced approach to develop high-density voltage-driven spintronic devices. NPG Asia Materials (2017) 9, e451; doi:10.1038/am.2017.204; published online 5 December 2017 INTRODUCTIONSpintronic devices, such as a magnetoresistive random-access memory device using a MgO-based magnetic tunnel junction (MTJ), 1,2 are expected to reduce the standby power of future computing systems by utilizing the non-volatile feature of magnetism. However, one significant challenge emerges from reducing the energy for information writing: magnetization switching. This issue is caused by electriccurrent-based operations of spintronic devices using electric-currentinduced magnetic fields, spin-transfer torque (STT) and spin-orbit torque based on the spin Hall effect rather than the electric-field-based operations presently used for semiconductor devices. For example, recent developments of STT-magnetoresistive random access memory have achieved~100 fJ per bit writing energies, 3 which corresponds to 10 7 k B T, where k B is the Boltzmann constant and T is the temperature (assumed to be 300 K here). In contrast, the energy required for maintaining magnetic information, that is, thermal stability, is between 60 k B T and 100 k B T. This large energy gap between data writing and retention, on the order of 10 5 , mainly originates

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Section: Highly Efficient Voltage Control T Nozaki Et Almentioning

confidence: 99%

Section: Highly Efficient Voltage Control T Nozaki Et Almentioning

confidence: 99%

Section: Highly Efficient Voltage Control T Nozaki Et Almentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

et al. 2017

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“…To mention an example, magnetization switching can be achieved via a spin-polarized electric current due to the spin-transfer torque or the spinorbital torque in the presence of a spin orbital interaction [6][7][8][9][10][11][12][13][14][15] . One may also use an electric field to manipulate the magnetization dynamics [16][17][18][19][20][21][22] in which case the electric field may lead to modulations in the charge carrier density or may affect the magnetic properties such as the magnetic moment, the exchange interaction and/or the magnetic anisotropy [16][17][18][19] . Compared to driving magnetization via a spin-polarized current, an electric field governing the magnetization has a clear advantage as it allows for non-volatile device concepts with significantly reduced energy dissipation.…”

Section: Introductionmentioning

confidence: 99%

Gate-controlled magnon-assisted switching of magnetization in ferroelectric/ferromagnetic junctions

Chen

Berakdar

et al. 2017

Phys. Rev. B

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Interfacing a ferromagnet with a polarized ferroelectric gate generates a non-uniform, interfacial spin density coupled to the ferroelectric polarization. This coupling allows for an electric field control of the effective field acting on the magnetization. To unravel the usefulness of this interfacial magneto-electric coupling we investigate the magnetization dynamics of a ferroelectric/ferromagnetic multilayer structure using the Landau-Lifshitz-Baryakhtar equation. The results demonstrate that the interfacial magnetoelectric coupling is utilizable as a highly localized and efficient tool for manipulating magnetism by electrical means. Ways of enhancing the strength of the interfacial coupling and/or its effects are discussed.

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Multiferroic RF /Microwave Devices

Peng

Howe

Yang

2019

Integrated Multiferroic Heterostructures and Applications

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Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer

Cited by 242 publications

References 35 publications

Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

Gate-controlled magnon-assisted switching of magnetization in ferroelectric/ferromagnetic junctions

Multiferroic RF /Microwave Devices

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