Electric-field-induced muonium formation in sapphire

Brewer, J. D.; Brewer, J.H.; Morris, G. D.; Eshchenko, D. G.; Storchak, Vyacheslav G.

doi:10.1016/s0921-4526(00)00428-2

Cited by 15 publications

(27 citation statements)

References 3 publications

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“…The delay is caused by the duration of the relaxation process and is not due to the delayed capture or loss of an electron, as suggested in other publications (e.g., Refs. [7,9,15,27]). The seemingly diamagnetic character of the fast relaxing signal is due to an almost vanishing average value of the fluctuating hyperfine interaction.…”

Section: Discussionmentioning

confidence: 99%

“…1) shows a precession frequency which is similar to the frequency of the diamagnetic state and has therefore been assigned to either Mu + or Mu − (for example, Refs. [7,9,13,15]). It was, however, not tested whether the state is really diamagnetic or is actually paramagnetic with an average hyperfine interaction so small that the hyperfine splitting cannot be observed.…”

Section: Usual Interpretation Of the Fast Relaxing Signalmentioning

confidence: 99%

“…[7][8][9]). This signal was first interpreted as being due to delayed capture by Mu + of an electron from the ionization track (delayed muonium formation, see Ref.…”

Section: Introductionmentioning

confidence: 99%

“…[8]). Later, electric-field measurements showed that this interpretation could not be confirmed and the signal was then assigned to initially formed Mu − which loses the electron after some time [9]. Cox et al [10] mention that neither of the two assignments is satisfactory (the sapphire puzzle), Mu − formation being not very plausible.…”

Section: Introductionmentioning

confidence: 99%

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Role of the transition state in muon implantation

et al. 2017

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In muon-spin-rotation experiments, positive muons are implanted in the material and come to rest in the unrelaxed host lattice. The formation of the final configuration requires a lattice relaxation which does not occur instantly. The present paper is concerned with the transition from the initial stopping state to the final muon configuration. We identify the often observed fast relaxing signal in muon experiments (e.g., in several oxides studied recently) with the transition state in this conversion process. This state is paramagnetic with a small hyperfine interaction (in the order of MHz) which fluctuates and averages to almost zero. Because of its apparent diamagnetic frequency behavior, the fast signal was in the past assigned to Mu + or Mu − . We present evidence that this state is actually paramagnetic. The model presented in this paper is of importance for the interpretation of past and future μSR measurements.

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Section: Discussionmentioning

confidence: 99%

Section: Usual Interpretation Of the Fast Relaxing Signalmentioning

confidence: 99%

“…[7][8][9]). This signal was first interpreted as being due to delayed capture by Mu + of an electron from the ionization track (delayed muonium formation, see Ref.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Role of the transition state in muon implantation

et al. 2017

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“…Muonium in Al 2 O 3 could only be inferred somewhat indirectly, posing a long-standing puzzle about its precise formation mechanismlately with the added contention that this may involve an interplay with the negative ion, i.e. the hydride-ion analogue (Minaichev et al 1970a, 1970b, Kreitzman et al 1986, Storchak et al 1997, Brewer et al 2000. Observation of muonium in fine oxide powders (Al 2 O 3 , MgO and SiO 2 ) raises quite different issues of surface mechanisms that are also still unresolved (Kiefl et al 1982, Harshman 1986, Donnelly et al 2006.…”

Section: Oxide Muonicsmentioning

confidence: 99%

Oxide muonics: II. Modelling the electrical activity of hydrogen in wide-gap and high-permittivity dielectrics

Cox

Gavartin

Lord

et al. 2006

J. Phys.: Condens. Matter

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Following the prediction and confirmation that interstitial hydrogen forms shallow donors in zinc oxide, inducing electronic conductivity, the question arises as to whether it could do so in other oxides, not least in those under consideration as thin-film insulators or high-permittivity gate dielectrics. We have screened a wide selection of binary oxides for this behaviour, therefore, using muonium as an accessible experimental model for hydrogen. New examples of the shallow-donor states that are required for n-type doping are inferred from hyperfine broadening or splitting of the muon spin rotation spectra. Electron effective masses are estimated (for several materials where they are not previously reported) although polaronic rather than hydrogenic models appear in some cases to be appropriate. Deep states are characterized by hyperfine decoupling methods, with new examples found of the neutral interstitial atom even in materials where hydrogen is predicted to have negative-U character, as well as a highly anisotropic deep-donor state assigned to a muonium-vacancy complex. Comprehensive data on the thermal stability of the various neutral states are given, with effective ionization temperatures ranging from 10 K for the shallow to over 1000 K for the deep states, and corresponding activation energies between tens of meV and several eV. A striking feature of the systematics, rationalized in a new model, is the preponderance of shallow states in materials with band-gaps less below 5 eV, atomic states above 7 eV, and their coexistence in the intervening threshold range, 5-7 eV.

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Muons in sulphur

Reid

Cox

2000

Physica B: Condensed Matter

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Electric-field-induced muonium formation in sapphire

Cited by 15 publications

References 3 publications

Role of the transition state in muon implantation

Role of the transition state in muon implantation

Oxide muonics: II. Modelling the electrical activity of hydrogen in wide-gap and high-permittivity dielectrics

Muons in sulphur

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