Electric field induced parallel conduction in GaAs/AlGaAs heterostructures

Abstract

Electric field induced interband second harmonic generation in GaAs/AlGaAs quantum wells

A model for the current instabilities in GaAs-AlGaAs heterojunction

“…Indications for a more complicated structure can be found in the work of Hendriks et al 5 These authors found current oscillations at relatively low fields ͑р 1 kV/cm͒, indicating a certain bistability. Such bistabilities have been found in double barrier resonant tunneling ͑DBRT͒ diodes.…”

“…In this paper we describe the modification of a previous model, 5 with which we perform quantitative calculations of the time dependence of the current in a heterojunction. We focus on the experiments of Zwaal et al 6,7 As we will argue the time scales involved justify a quasistationary approach.…”

“…These phenomena have received widespread attention because of the consequences for applications. 1 Especially the groups in Sussex [2][3][4] and Eindhoven [5][6][7] have paid much attention to these effects. Most of the experiments are I-V measurements, where a high-voltage pulse is applied to a twoterminal device.…”

Time dependence of negative and positive photoconductivity for Si δ-doped AlGaAs/InGaAs/AlGaAs quantum well under various temperatures and various incident photon energies and intensities

“…Thus, the transport of these hot electrons above the conduction band edge plays a predominantly role for PC analysis. Figure 4 displays a 3D schematic picture [28] for the electron transport above the conduction band edge on the surface cut along the depth and length directions for this Si δdoped AlGaAs/InGaAs/AlGaAs QW heterostructure. Previous researches have shown that the parallel conductance ( i.e., including the dotted blue paths in figure 4, the conduction other than the transport along the active QW channel by the red path) can be ignored for the Al x′ Ga 1−x′ As/GaAs single QW heterojunction with Al fraction x′>0.3 [29] and for the electric field below 300 V cm −1 [28].…”

Tunable Real Space Transfer Oscillator by Delayed Feedback Control of Chaos

“…We consider nonlinear charge transport parallel to the layers of the modulation-doped GaAs/Al^Gaj _^As heterostructure schematically shown in Figure 1 (a). In experiments the system displays N-shaped negative differential conductivity (NNDC) [7], ac-driven cur rent oscillations [8] and spontaneous oscillations un der dc bias [9][10][11][12]. The heterostructure consists of a GaAs layer of width L x and an Al^Ga^^As layer of width L2.…”