Electric field induced spin resolved graphene p–n junctions on magnetic Janus VSeTe monolayer

Abstract

Graphene based p-n junctions exhibit intriguing and distinctive electronic properties, making them promising candidates for spintronic and spin photonic devices. While the attendant realization of magnetized graphene p-n junctions is highly desirable. Using first-principles calculations, we show that in the presence of magnetic proximity coupling effect of graphene supported on Te-termination magnetic Janus VSeTe monolayer (VSeTe/G), the graphene is readily spin-polarized and the Dirac bands near Fermi level keep intact. More interestingly, the external electric field (Eex) could significantly influence the bands of the spin down channel near Fermi level, due to the dominant electronic Coulomb screening effect. When the Eex exceeds 0.35eV/Å with opposite direction to intrinsic dipole moment, the VSeTe/G heterostructure would turn into n type doping from the initial light p type doping in the spin down channel. However, those of the spin up channel in the vicinity of Fermi level are inert and still preserve initial p type against external electric field. In terms of such distinctive differences between the Dirac bands in the spin up and spin down channels, we propose a featured spin resolved graphene p-n junctions on magnetic Janus VSeTe by applying appropriate external electric field. Our findings are generally applicable to other similar magnetic Janus systems (i.e., graphene/FeICl) and might provide a feasible strategy to realize stable spin resolved graphene p-n junctions extendedly.

Localized magnetic moment induced by boron adatoms chemisorbed on graphene

“…Moreover, we happen to identify that the relatively large local spin-polarization can result to spin-resolved p-n junction, where the spin-up channel is n type doping while the spin-down one is p type doping (see the fitted green lines of figures 2(e) and (f)). This feature of Dirac bands is similar to our previous finding that magnetic Janus monolayer combined external electric field can induce spin-resolved graphene p-n junction, which is the result of the delicately competing between charge transfer and spin splitting [66]. Here, the achieved spin-resolved graphene p-n junction just by sizable local spin-polarization should be more feasible, reliable and significant.…”

Electronic Structure and Magnetic Anisotropy Response of Janus Monolayer VSeTe

“…[19,20] Using firstprinciples calculations, it has been predicted that the heterostructures (vertical/lateral) of Janus MoSSe-WSSe will make an outstanding material for optoelectronic devices. [21] The spin-resolved p-n junction can be achieved by making VSeTe and graphene heterostructure, [22] which is dominant by the carriers to spin flip in opposite doping area. Hence, it is proved that we can alter physical properties of materials by doping, substitution, adsorption, and Janusing the materials as we already discussed earlier.…”

Electrostatic gating-driven transition from Schottky contact to p–n junction in moiré patterned Ars/Gra heterostructures

“…[7][8][9][10][11] This is because, on the one hand, doping induced stable electron/hole carriers are essential for graphene-based electronic devices. On the other hand, the type of doping can be tuned effectively by constructing atomically thin two-dimensional (2D) vdW heterostructures, which not only preserve the individual properties of the layered materials but also could confer coupled electronic characteristics, especially for graphene-based Dirac bands, such as distinctive electronic, transport and excited characteristics, [12][13][14][15][16][17] localized and cloned Dirac fermions, [18][19][20][21] Klein tunneling, particle/electron-beam collimation, anisotropic/ angle-dependent carrier transmission, [22][23][24][25] topological Bloch bands in graphene/BN, 26 and neoteric ultraviolet photodetectors. [27][28][29][30] Great efforts have been made to realize identified 2D vdW heterostructures.…”

“…Then, the graphene-based vdW p-n junctions can be readily achieved. 14,[37][38][39] Thus, in this work, we aim to study the influence of the interlayer interaction between the Ars and Gra layers of the Ars/ Gra vdW heterostructure on the charger transfer and attendant electronic bands. Regarding the weak coupling between the moire ´patterned Ars/Gra heterostructure, we clearly show that the binding energy between the interlayers is relatively weak and there is no net charge transfer between the two layers due to the physically polarized effect of the intralayered electrons.…”