2024
DOI: 10.1063/5.0200151
|View full text |Cite
|
Sign up to set email alerts
|

Electric-field-induced surface modification in TlGaSe2 layered semiconductor: Capacitive effect caused by electromigration of native defects

Emir Suad Olcay,
Ayşe Sönmez,
Esra Okumuş
et al.

Abstract: This paper reports the changes in morphology and topographic roughness on the surface of a pristine TlGaSe2 layered crystal caused by an external electric field applied perpendicular to the layer plane at room temperature. These electric-field-induced surface reconstructions and modifications in the TlGaSe2 sample were monitored through x-ray reflectivity, x-ray diffraction, and atomic force microscopy techniques. Two distinct electric-field-induced surface responses have been observed: the shifting of the XRD… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 56 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?