Electric Field Properties of CdTe Nuclear Detectors

Cola, A.; Farella, I.; Mancini, A. M.; Donati, A.

doi:10.1109/tns.2007.896218

Cited by 45 publications

(29 citation statements)

References 16 publications

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“…More importantly, we found the distribution of the internal electrical field is not uniform; the internal electric field firstly increases laterally from the anode towards the cathode until it arrives at the maximum value, which is approximately located on the one third of the full height, then generally decreases towards the cathode. This behavior is somewhat similar with the internal electric field in CdTe detector equipped with In and Pt contacts [6]. To further achieve the details of internal electric field distribution, we also plotted the intensity distribution from the left side to the right side (along C-D line in figure 3) and observed another interesting phenomenon.…”

Section: Resultssupporting

confidence: 69%

Opto-electrical characterization and X-ray Mapping of large-volume cadmium zinc telluride radiation detectors

et al. 2009

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Large-volume cadmium zinc telluride (CZT) radiation detectors would greatly improve radiation detection capabilities and, therefore, attract extensive scientific and commercial interests. CZT crystals with volumes as large as hundreds of centimeters can be achieved today due to improvements in the crystal growth technology. However, the poor performance of large-volume CZT detectors is still a challenging problem affecting the commercialization of CZT detectors and imaging arrays. We have employed Pockels effect measurements and synchrotron X-ray mapping techniques to investigate the performancelimiting factors for large-volume CZT detectors. Experimental results with the above characterization methods reveal the non-uniform distribution of internal electric field of large-volume CZT detectors, which help us to better understand the responsible mechanism for the insufficient carrier collection in large-volume CZT detectors.

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Section: Resultssupporting

confidence: 69%

Opto-electrical characterization and X-ray Mapping of large-volume cadmium zinc telluride radiation detectors

et al. 2009

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“…At T ¼44 1C, the current transient exhibits the plateau after about 200 s, time that decreases with the temperature increasing. This plateau is explained by the saturation of the electric field at the anode, which causes the decrease of the effective potential difference between anode and cathode [31]. According to the CAM model, the increasing of the reverse current at fixed bias is due to the holes emitted from trap levels, which generate a negative space charge near the anode and the creation of the dead layer near the cathode.…”

Section: Transients Of the Reverse Currentmentioning

confidence: 99%

Electrical characterization of CdTe pixel detectors with Al Schottky anode

Turturici

Abbene

Gerardi

et al. 2014

Nuclear Instruments and Methods in Physics Research Section A:

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a b s t r a c tPixelated Schottky Al/p-CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopic imaging, even though they suffer from bias-induced time instability (polarization). In this work, we present the results of the electrical characterization of a (4 Â 4) pixelated Schottky Al/p-CdTe/Pt detector. Current-voltage (I-V) characteristics and current transients were investigated at different temperatures. The results show deep levels that play a dominant role in the charge transport mechanism. The conduction mechanism is dominated by the space charge limited current (SCLC) both under forward bias and at high reverse bias. Schottky barrier height of the Al/CdTe contact was estimated by using the thermionic-field emission model at low reverse bias voltages. Activation energy of the deep levels was measured through the analysis of the reverse current transients at different temperatures. Finally, we employed an analytical method to determine the density and the energy distribution of the traps from SCLC current-voltage characteristics.

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“…[8][9][10][11]. In our recent paper, 12 we have applied the technique of infrared spectral scanning combined with the Pockels electro-optic effect to investigate the energy of deep levels responsible for depolarization with infrared light and to look for an optimal energy range for depolarization.…”

Section: Introductionmentioning

confidence: 99%

Temporal and temperature evolution of electric field in CdTe:In radiation detectors

Dědič

Zázvorka

Rejhon

et al. 2014

Journal of Applied Physics

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We have studied the possibility of above bandgap light induced depolarization of CdZnTe planar radiation detector operating under high flux of X-rays by Pockels effect measurements. In this contribution, we show a similar influence of X-rays at 80 kVp and LED with a wavelength of 910 nm irradiating the cathode on polarization of the detector due to an accumulation of a positive space charge of trapped photo-generated holes. We have observed the depolarization of the detector under simultaneous cathode-site illumination with excitation LED at 910 nm and depolarization above bandgap LED at 640 nm caused by trapping of drifting photo-generated electrons. Although the detector current is quite high during this depolarization, we have observed that it decreases relatively fast to its initial value after switching off the depolarizing light. In order to get detailed information about physical processes present during polarization and depolarization and, moreover, about associated deep levels, we have performed the Pockels effect infrared spectral scanning measurements of the detector without illumination and under illumination in polarized and optically depolarized states. V C 2015 AIP Publishing LLC. [http://dx

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Electric Field Properties of CdTe Nuclear Detectors

Cited by 45 publications

References 16 publications

Opto-electrical characterization and X-ray Mapping of large-volume cadmium zinc telluride radiation detectors

Opto-electrical characterization and X-ray Mapping of large-volume cadmium zinc telluride radiation detectors

Electrical characterization of CdTe pixel detectors with Al Schottky anode

Temporal and temperature evolution of electric field in CdTe:In radiation detectors

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