Electric field tuning of the band gap in graphene multilayers

Avetisyan, A. A.; Partoens, B.; Peeters, F. M.

doi:10.1103/physrevb.79.035421

Cited by 132 publications

(118 citation statements)

References 16 publications

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“…22,23 By further increasing the layer numbers, one has graphene multilayers whose energy dispersion near the K-point can be tuned by a gate voltage. 24 Graphene exhibits strong optical response. [8][9][10][11]25 The universal conductance 0 = e 2 / 4h leads to an absorption of around 2.3%.…”

Section: Rqolqhdu Rswlfdo Vshfwuxp Ri Elod\hu Judskhqh Lq Wkh Whudkhmentioning

confidence: 99%

Nonlinear optical spectrum of bilayer graphene in the terahertz regime

2010

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Section: Rqolqhdu Rswlfdo Vshfwuxp Ri Elod\hu Judskhqh Lq Wkh Whudkhmentioning

confidence: 99%

Nonlinear optical spectrum of bilayer graphene in the terahertz regime

2010

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“…14 However, a nonmonotonous evolution of the gap width with the electron density has been predicted for graphene triple and quadruple layer systems, which has been attributed to trigonal warping of the band structure. 15,16 Moreover, ab initio density-functional theory calculations have been used extensively to investigate the electronic structure of bilayer graphene and essentially confirm the behavior suggested by the tight-binding and continuum models. [17][18][19] Due to the presence of edges, graphene nanoribbons ͑GNRs͒ reveal a much richer phenomenology than 2D graphene sheets.…”

Section: Introductionmentioning

confidence: 99%

Interactions and screening in gated bilayer graphene nanoribbons

Heinzel

Shylau

et al. 2010

Phys. Rev. B

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The effects of Coulomb interactions on the electronic properties of bilayer graphene nanoribbons ͑BGNs͒ covered by a gate electrode are studied theoretically. The electron-density distribution and the potential profile are calculated self-consistently within the Hartree approximation. A comparison to their single-particle counterparts reveals the effects of interactions and screening. Due to the finite width of the nanoribbon in combination with electronic repulsion, the gate-induced electrons tend to accumulate along the BGN edges where the potential assumes a sharp triangular shape. This has a profound effect on the energy gap between electron and hole bands, which depends nonmonotonously on the gate voltage and collapses at intermediate electric fields. We interpret this behavior in terms of interaction-induced warping of the energy dispersion.

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“…A great amount of effort has been devoted to open a tunable band gap in graphene and different methods have been proposed: chemical functionalization (Wang et al 2009;Bekyarova et al 2009;Sofo et al 2007;Zanella et al 2008;Choi et al 2009), doping with heteroatoms (Denis 2010;Dai et al 2009), using electric fields (Avetisyan et al 2009;Mak et al 2009) and depositing graphene on substrates like SiO 2 , SiC (Shemella and Nayak 2009;Peng and Ahuja 2008).…”

Section: Introductionmentioning

confidence: 99%

Stability and electronic properties of isomers of B/N co-doped graphene

Rani

Jindal

2013

Appl Nanosci

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We study and compare some of the possible isomers of BN co-doped graphene on the basis of their composition and electronic properties. The effect of doping has been studied theoretically by substituting the C atoms of graphene with an equal amount of B/N with their concentration varying from 4 % (2 atoms of the dopant in 50 host atoms) to 24 % and choosing different doping sites for each concentration. We made use of VASP (Vienna Abinitio Simulation Package) software based on density functional theory to perform all calculations. While the resulting geometries do not show much of distortion on doping, the electronic properties show a transition from semimetal to semiconductor with increasing number of dopants as in the case of individual B and N doping. The study shows that the BN doping introduces the band gap at the Fermi level unlike individual B and N doping which causes the shifting of Fermi level. High value of the cohesive energy indicates the stability of the resulting heterostructures. Isomers formed by choosing different doping sites differ significantly in relative stability and band gap introduced and these aspects, to a great extent, depend upon position of B and N atoms in the heterostructure.

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Electric field tuning of the band gap in graphene multilayers

Cited by 132 publications

References 16 publications

Nonlinear optical spectrum of bilayer graphene in the terahertz regime

Nonlinear optical spectrum of bilayer graphene in the terahertz regime

Interactions and screening in gated bilayer graphene nanoribbons

Stability and electronic properties of isomers of B/N co-doped graphene

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